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參數(shù)資料
| 型號(hào)： | NTD4404N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 85 Amps, 24 Volts N-Channel DPAK(85A，24V，N通道，DPAK，功率MOSFET) |
| 中文描述： | 32 A, 24 V, 0.00517 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NTD4404N |
NTD4404N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 V
dc
, I
D
= 250 A
dc
)
Temperature Coefficient (Positive)
V
(br)DSS
24
28
20.5
V
dc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
)
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
, T
J
= 150
°
C)
GateBody Leakage Current
(V
GS
=
±
20 V
dc
, V
DS
= 0 V
dc
)
I
DSS
1.5
10
A
dc
I
GSS
±
100
nA
dc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
= V
, I
= 250 A
)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.5
4.0
2.0
V
dc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 V
dc
, I
D
= 20 A
dc
)
Forward Transconductance (Note 3)
(V
DS
= 10 V
dc
, I
D
= 15 A
dc
)
R
DS(on)
4.23
5.17
m
g
FS
38
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 V
dc
, V
GS
= 0 V,
f = 1 MHz)
V
C
iss
C
oss
C
rss
2050
pF
Output Capacitance
871
Transfer Capacitance
359
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
6.3
ns
Rise Time
= 10 V
= 10 V
(V
GS
10 V
dc
, V
DD
10 V
dc
,
I
D
= 30 A
dc
, R
G
= 3
77
TurnOff Delay Time
)
25
Fall Time
12
Gate Charge
(V
GS
= 5 V
dc
, I
=10 A
dc
,
V
DS
= 10 V
dc
) (Note 3)
I
17.7
nC
2.6
7.1
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
V
SD
V
dc
= 10 A
= 0 V
S
= 10 A
dc
, V
GS
= 0 V
dc
, T
J
= 125 C)
°
C)
(I
0 63
0.63
1.0
(I
S
10 A
dc
, V
GS
0 V
dc
) (Note 3)
0.78
Reverse Recovery Time
t
rr
t
a
t
b
37.5
ns
= 20 A
= 0 V
(I
S
20 A
, V
0 V
,
dI
S
/dt = 100 A/ s) (Note 3)
16.8
20.7
Reverse Recovery Stored Charge
Q
RR
0.027
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
Package
Shipping
NTD4404N
NTD4404NG
DPAK
DPAK
(PbFree)
75 Units / Rail
75 Units / Rail
NTD4404NT4
NTD4404NT4G
DPAK
DPAK
(PbFree)
2500 / Tape & Reel
2500 / Tape & Reel
NTD4404N1
NTD4404N1G
DPAK3, Straight Lead
DPAK3, Straight Lead
(PbFree)
75 Units / Rail
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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| NTD4404NT4G | 功能描述:MOSFET NFET 24V 4.7MR TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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