參數(shù)資料
型號(hào)： NTD4302
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
中文描述： 8.4 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA-01 DPAK-3
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 85K
代理商： NTD4302
NTD4302
http://onsemi.com
2
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Thermal Resistance
JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Continuous Drain Current @ T
C
= 25
°
C (Note 4)
Continuous Drain Current @ T
C
= 100
°
C
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 3)
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 3)
R
θ
JC
P
D
I
D
I
D
1.65
75
68
43
°
C/W
Watts
Amps
Amps
R
θ
JA
P
D
I
D
I
D
I
DM
67
1.87
11.3
7.1
36
°
C/W
Watts
Amps
Amps
Amps
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
120
1.04
8.4
5.3
28
°
C/W
Watts
Amps
Amps
Amps
°
C
Operating and Storage Temperature Range
55 to 150
Single Pulse DraintoSource Avalanche Energy Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, Peak I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
)
E
AS
722
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD4302/D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Power MOSFET 20 Amps， 30 Volts
NTD4302_10 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 68 A, 30 V, Na??Channel DPAK
NTD4302-001 功能描述:MOSFET 30V 68A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4302-1 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 68 Amps, 30 Volts(N-Channel DPAK)
NTD4302-1G 功能描述:MOSFET 30V 68A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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