參數(shù)資料
型號(hào): NTD4302
廠商: ON SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
中文描述: 8.4 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369AA-01 DPAK-3
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 85K
代理商: NTD4302
NTD4302
http://onsemi.com
2
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
30
Vdc
GatetoSource Voltage Continuous
V
GS
±
20
Vdc
Thermal Resistance
JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Continuous Drain Current @ T
C
= 25
°
C (Note 4)
Continuous Drain Current @ T
C
= 100
°
C
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 3)
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 25
°
C
Continuous Drain Current @ T
A
= 100
°
C
Pulsed Drain Current (Note 3)
R
θ
JC
P
D
I
D
I
D
1.65
75
68
43
°
C/W
Watts
Amps
Amps
R
θ
JA
P
D
I
D
I
D
I
DM
67
1.87
11.3
7.1
36
°
C/W
Watts
Amps
Amps
Amps
R
θ
JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
120
1.04
8.4
5.3
28
°
C/W
Watts
Amps
Amps
Amps
°
C
Operating and Storage Temperature Range
55 to 150
Single Pulse DraintoSource Avalanche Energy Starting T
J
= 25
°
C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, Peak I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
)
E
AS
722
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
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