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參數(shù)資料
| 型號： | NTD40N03R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 45 Amps, 25 Volts |
| 中文描述： | 32 A, 25 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | NTD40N03R |
NTD40N03R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
= 0 Vdc, I
= 250 Adc)
Temperature Coefficient (Positive)
V(br)
DSS
25
28
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current
(V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
= V
, I
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.7
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 10 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
R
DS(on)
18.6
12.6
23
16.5
m
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 10 Adc)
g
FS
20
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
584
pF
Output Capacitance
(V
= 20 Vdc, V
= 0 V, f = 1 MHz)
DS
GS
C
oss
254
Transfer Capacitance
C
rss
99
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
4.5
ns
Rise Time
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 10 Adc, R
G
= 3 )
t
r
19.5
TurnOff Delay Time
t
d(off)
16.7
Fall Time
t
f
3.5
Gate Charge
Q
T
5.78
nC
(V
GS
= 4.5 Vdc, I
D
= 10 Adc,
V
DS
= 10 Vdc) (Note 3)
Q
1
2.1
Q
2
2.5
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 10 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 10 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0 85
0.85
0.71
1 2
1.2
Vdc
Reverse Recovery Time
t
rr
20.4
ns
(I
S
= 10 Adc, V
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
a
8.25
t
b
12.1
Reverse Recovery Stored Charge
Q
RR
0.007
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD40N03R-001 | 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD40N03R-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 45 Amps, 25 Volts |
| NTD40N03R-1G | 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD40N03RG | 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD40N03RT4 | 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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