參數(shù)資料
型號： NTD3055-150-1
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:15; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
中文描述： 9 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369D-01, DPAK-3
文件頁數(shù)： 2/8頁
文件大小： 74K
代理商： NTD3055-150-1
NTD3055L104
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
GateBody Leakage Current (V
GS
=
±
15
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
Static DraintoSource OnResistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 6.0 Adc)
Static DraintoSource OnVoltage (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 12 Adc)
(V
GS
= 5.0 Vdc, I
D
= 6.0 Adc, T
J
= 150
°
C)
Forward Transconductance (Note 3) (V
DS
= 8.0 Vdc, I
D
= 6.0 Adc)
V
(BR)DSS
60
70
62.9
Vdc
mV/
°
C
Adc
I
DSS
1.0
10
±
100
I
GSS
nAdc
V
GS(th)
1.0
1.6
4.2
2.0
Vdc
mV/
°
C
m
R
DS(on)
89
104
V
DS(on)
0.98
0.86
9.1
1.50
Vdc
g
FS
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
25 Vdc V
C
iss
C
oss
C
rss
316
440
pF
Output Capacitance
105
150
Transfer Capacitance
35
70
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
Ga e C a ge
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
9.2
104
19
40.5
7.4
2.0
4.0
20
210
40
80
20
ns
= 30 Vdc, I
= 12 Adc,
(V
DD
D
12 Adc,
V
= 5.0 Vdc, R
= 9.1 ) (Note 3)
GS
G
(V
DS
= 48 Vdc, I
D
= 12 Adc,
= 5 0 Vdc) (Note 3)
V
GS
= 5.0 Vdc) (Note 3)
48 Vdc I
nC
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 12 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 12 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.95
0.82
1.2
Vdc
Reverse Recovery Time
e e se
eco e y
(I
S
= 12 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
12 Adc V
t
rr
t
a
t
b
35
21
14
0.04
ns
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
Q
RR
C
ORDERING INFORMATION
Device
Package
Shipping
NTD3055L104
NTD3055L104G
DPAK
DPAK
(PbFree)
75 Units/Rail
75 Units/Rail
NTD3055L1041
NTD3055L1041G
DPAK3
DPAK3
(PbFree)
75 Units/Rail
75 Units/Rail
NTD3055L104T4
NTD3055L104T4G
DPAK
DPAK
(PbFree)
2500 Tape & Reel
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD3055-150-1G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-150G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-150T4 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055-150T4G 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD3055AV1 制造商:Rochester Electronics LLC 功能描述:- Bulk
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