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參數(shù)資料
| 型號： | NTD23N03R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23 Amps, 25 Volts, N−Channel DPAK |
| 中文描述： | 3.8 A, 25 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NTD23N03R |
NTD23N03R
http://onsemi.com
4
100
10
1
8
6
4
2
0
10
6
8
4
0
10
10
400
15
5
0
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
300
200
100
0
5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage versus Total Charge
V
G
,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
,
t
0
3.5
4.5
2.5
1.5
0.5
1
10
100
0
0.4
0.2
0.8
1.0
I
D
= 6 A
T
J
= 25
°
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
2
0.6
Q
2
C
iss
V
DS
= 10 V
I
D
= 6 A
V
GS
= 10 V
V
GS
= 0 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
V
DS
Q
1
Q
T
T
J
= 25
°
C
T
J
= 150
°
C
3.0
4.0
2.0
1.0
100
10
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
1
10
100
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
0.1
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 s
100 s
1 ms
10 ms
dc
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTD23N03R-1 | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1G | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03RG | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03RT4 | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03RT4G | 23 Amps, 25 Volts, N−Channel DPAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD23N03R-001 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD23N03R-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1G | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD23N03RG | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD23N03RT4 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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