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參數(shù)資料
| 型號： | NTD23N03R-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23 Amps, 25 Volts, N−Channel DPAK |
| 中文描述： | 3.8 A, 25 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 64K |
| 代理商： | NTD23N03R-1 |
NTD23N03R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
= 0 Vdc, I
= 250 Adc)
Temperature Coefficient (Positive)
V(br)
DSS
25
28
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current
(V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
= V
, I
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.8
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 4.5 Vdc, I
D
= 6 Adc)
(V
GS
= 10 Vdc, I
D
= 6 Adc)
R
DS(on)
50.3
32.3
60
45
m
Forward Transconductance (Note 3)
(V
DS
= 10 Vdc, I
D
= 6 Adc)
g
FS
13
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
225
pF
Output Capacitance
(V
= 20 Vdc, V
= 0 V, f = 1 MHz)
DS
GS
C
oss
108
Transfer Capacitance
C
rss
48
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
2.0
ns
Rise Time
(V
GS
= 10 Vdc, V
DD
= 10 Vdc,
I
D
= 6 Adc, R
G
= 3 )
t
r
14.9
TurnOff Delay Time
t
d(off)
9.9
Fall Time
t
f
2.0
Gate Charge
Q
T
3.76
nC
(V
GS
= 4.5 Vdc, I
D
= 6 Adc,
V
DS
= 10 Vdc) (Note 3)
Q
1
1.7
Q
2
1.6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 6 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 6 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
0 87
0.87
0.74
1 2
1.2
Vdc
Reverse Recovery Time
t
rr
8.7
ns
(I
S
= 6 Adc, V
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 3)
t
a
5.2
t
b
3.5
Reverse Recovery Stored Charge
Q
RR
0.003
C
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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