- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361154 > NTB18N06LT4G (ON SEMICONDUCTOR) Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) PDF資料下載
參數(shù)資料
| 型號： | NTB18N06LT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 418AA-01, D2PAK-3 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NTB18N06LT4G |
NTP18N06L, NTB18N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Note 1)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
70
63.2
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 60 Vdc)
(V
GS
= 0 Vdc, V
DS
= 60 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
15
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(Note 1)
(V
DS
= V
GS,
I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.6
4.2
2.0
Vdc
mV/
°
C
Static DraintoSource OnResistance
(Note 1)
(V
GS
= 5.0 Vdc, I
D
= 7.5 Adc)
R
DS(on)
85
100
m
Static DraintoSource OnVoltage
(Note 1)
(V
GS
= 5.0 Vdc, I
D
= 15 Adc)
(V
GS
= 5.0 Vdc, I
D
= 7.5 Adc, T
J
= 150
°
C)
V
DS(on)
1.46
1.2
1.8
Vdc
Forward Transconductance
(Note 1) (V
DS
= 7.0 Vdc, I
D
= 6.0 Adc)
g
FS
9.4
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
310
440
pF
Output Capacitance
C
oss
106
150
Reverse Transfer Capacitance
C
rss
37
70
SWITCHING CHARACTERISTICS
(Note 2)
TurnOn Delay Time
t
d(on)
11
20
ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 15 Adc,
= 5 0 Vdc
V
GS
= 5.0 Vdc,
= 9.1 )
R
G
9.1 )
(Note 1)
t
r
121
210
TurnOff Delay Time
t
d(off)
11
40
Fall Time
t
f
42
80
Gate Charge
(V
DS
= 48 Vdc, I
D
= 15 Adc,
= 5.0 Vdc)
V
GS
(Note 1)
Q
t
7.3
20
nC
Q
1
1.9
Q
2
4.3
SOURCEDRAIN DIODE CHARACTERISTICS
Diode Forward OnVoltage
(I
S
= 15 Adc, V
GS
= 0 Vdc)
(Note 1)
(I
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.96
0.83
1.2
Vdc
Reverse Recovery Time
t
rr
35
ns
(I = 15 Adc V
= 15 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
(Note 1)
t
a
23
t
b
12
Reverse Recovery Stored
Charge
Q
RR
0.043
C
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.
2. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTP18N06L | Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) |
| NTB23N03RG | Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK |
| NTB23N03RT4 | Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK |
| NTB23N03RT4G | Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK |
| NTB5404N | Power MOSFET 40 V, 136 A(40V, 136A, 功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB18N06T4 | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB18N06T4G | 功能描述:MOSFET 60V 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB22N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB22N06L | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 22A 3-Pin(2+Tab) D2PAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTB22N06LT4 | 功能描述:MOSFET N-CH 60V 22A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。