
NT5SV16M4DT
NT5SV8M8DT
NT5SV4M16DT
64Mb Synchronous DRAM
REV 1.1
10/01
13
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
DD
Power Supply Voltage
-0.3 to +4.6
V
1
V
DDQ
Power Supply Voltage for Output
-0.3 to +4.6
V
1
V
IN
Input Voltage
-0.3 to V
DD
+0.3
V
1
V
OUT
Output Voltage
-0.3 to V
DD
+0.3
V
1
T
A
Operating Temperature (ambient)
0 to +70
°
C
1
T
STG
Storage Temperature
-55 to +125
°
C
1
P
D
Power Dissipation
1.0
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this spec-
ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions
(T
A
=
0
°
C to 70
°
C)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
V
DD
Supply Voltage
3.0
3.3
3.6
V
1
V
DDQ
Supply Voltage for Output
3.0
3.3
3.6
V
1
V
IH
Input High Voltage
2.0
—
V
DD
+ 0.3
V
1, 2
V
IL
Input Low Voltage
-0.3
—
0.8
V
1, 3
1. All voltages referenced to V
SS
and V
SSQ
.
2. V
IH
(max) = V
DD
+ 1.2V for pulse width
≤
5ns.
3. V
IL
(min) = V
SS
- 1.2V for pulse width
≤
5ns.
Capacitance
(T
A
= 25
°
C, f = 1MHz, V
DD
= 3.3V
±
0.3V)
Symbol
Parameter
Min.
Typ
Max.
Units
C
I
Input Capacitance (A0-A11, BS0, BS1, CS, RAS, CAS, WE, CKE, DQM)
2.5
3.0
3.8
pF
Input Capacitance (CK)
2.5
2.8
3.5
pF
C
O
Output Capacitance (DQ0 - DQ15)
4.0
4.5
6.5
pF