參數(shù)資料
型號(hào)： NT5DS64M4AT-6
廠商： Electronic Theatre Controls, Inc.
英文描述： 256Mb DDR333/300 SDRAM
中文描述： 256Mb的DDR333/300內(nèi)存
文件頁數(shù)： 17/27頁
文件大?。?/td> 269K
代理商： NT5DS64M4AT-6
NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb DDR333/300 SDRAM
Preliminary
10/01
17
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Capacitance
Parameter
Symbol
Min.
Max.
Units
Notes
Input Capacitance: CK, CK
CI
1
2.0
3.0
pF
1
Delta Input Capacitance: CK, CK
delta CI
1
0.25
pF
1
Input Capacitance: All other input-only pins (except DM)
CI
2
2.0
3.0
pF
1
Delta Input Capacitance: All other input-only pins (except DM)
delta CI
2
0.5
pF
1
Input/Output Capacitance: DQ, DQS, DM
C
IO
4.0
5.0
pF
1, 2
Delta Input/Output Capacitance: DQ, DQS, DM
delta C
IO
0.5
pF
1
1. V
DDQ
= V
DD
= 2.5V ±
0.2V (minimum range to maximum range), f = 100MHz, T
A
= 25
°
C, VO
DC
= V
DDQ/2
, VO
Peak -Peak
= 0.2V.
2. Although DM is an input-only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is
required to match input propagation times of DQ, DQS and DM in the system.
DC Electrical Characteristics and Operating Conditions
(0°C
≤
T
A
≤
70
°
C;
V
D
DQ
= 2.5V
±
0.2V,
V
DD
=
+
2.5V
±
0.2V, see AC Characteristics)
Symbol
Parameter
Min
Max
Units
Notes
V
DD
Supply Voltage
2.3
2.7
V
1
V
DDQ
I/O Supply Voltage
2.3
2.7
V
1
V
SS
, V
SSQ
Supply Voltage
I/O Supply Voltage
0
0
V
V
REF
I/O Reference Voltage
0.49 x V
DDQ
0.51 x V
DDQ
V
1, 2
V
TT
I/O Termination Voltage (System)
V
REF
0.04
V
REF
+
0.04
V
1, 3
V
IH(DC)
Input High (Logic1) Voltage
V
REF
+
0.15
V
DDQ
+
0.3
V
1
V
IL(DC)
Input Low (Logic0) Voltage
0.3
V
REF
0.15
V
1
V
IN(DC)
Input Voltage Level, CK and CK Inputs
0.3
V
DDQ
+
0.3
V
1
V
ID(DC)
Input Differential Voltage, CK and CK Inputs
0.30
V
DDQ
+
0.6
V
1, 4
VI
Ratio
V-I Matching Pullup Current to Pulldown Current Ratio
0.71
1.4
5
I
I
Input Leakage Current
Any input 0V
≤
V
IN
≤
V
DD
; (All other pins not under test
=
0V)
5
5
μ
A
1
I
OZ
Output Leakage Current
(DQs are disabled; 0V
≤
V
out
≤
V
DDQ
5
5
μ
A
1
I
OH
Output Current: Nominal Strength Driver
High current (V
OUT
= V
-0.373V, min V
, min V
TT
)
Low current (V
OUT
= 0.373V, max V
REF
, max V
TT
)
16.8
mA
1
I
OL
16.8
1. Inputs are not recognized as valid until V
REF
stabilizes.
2. V
REF
is expected to be equal to 0.5 V
DDQ
of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak
noise on V
REF
may not exceed ± 2% of the DC value.
3. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and
must track variations in tHalf-he DC level of V
REF
.
4. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-ture and
voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum difference
between pullup and pulldown drivers due to process variation.
相關(guān)PDF資料
PDF描述
NT5DS64M4AT-66 256Mb DDR333/300 SDRAM
NT5DS64M4AW 256Mb DDR333/300 SDRAM
NT5DS64M4AW-6 256Mb DDR333/300 SDRAM
NT5DS64M4AW-66 256Mb DDR333/300 SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NT5DS64M4AT-66 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb DDR333/300 SDRAM
NT5DS64M4AT-75B 制造商:Nanya Technology Corporation 功能描述:64M X 4 DDR DRAM, 0.75 ns, 66 Pin Plastic SMT
NT5DS64M4AT-7K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|DDR|4X16MX4|CMOS|TSSOP|66PIN|PLASTIC
NT5DS64M4AT-8B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Double Data Rate SDRAM
NT5DS64M4AW 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb DDR333/300 SDRAM
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