
NT511740D5J
16MEG : x4
CMOS with Extended Data Out
AC CHARACTERISTICS
(0
°
C <= Ta <= 70
°
C , See note 1,2) ; Test condition : VCC=5.0V ± 10%, V
IH
/V
IL
=2.4/0.8V, V
OH
/V
OL
=2.0/0.8V
REV 1.0 May. 2000
7
NAYNA TECHNOLOGY CORP. reserves the right to change products an NANYA TECHNOLOGY CORP.
-50
-60
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Random read or write cycle time
Read-modify-write cycle time
Access time from
RAS
Access time from
CAS
Access time from column address
CAS
to output in Low-Z
Output buffer turn-off delay from
CAS
OE
to output in Low-Z
Transition time (rise and fall)
RAS
precharge time
RAS
pulse width
RAS
hold time
CAS
hold time
CAS
pulse width
RAS
to
CAS
delay time
RAS
to column address delay time
CAS
to
RAS
precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to
RAS
lead time
Read command set-up time
Read command hold time referenced to
CAS
Read command hold time referenced to
RAS
Write command hold time
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
Data set-up time
Data hold time
Refresh period (2K, Normal)
Refresh period (L-ver)
Write command set-up time
t RC
84
-
104
-
ns
t RWC
110
135
ns
t RAC
50
60
ns
3,4,10
t CAC
13
15
ns
3,4,5
t AA
25
30
ns
3,10
t CLZ
0
0
ns
3
t CEZ
0
0
ns
6,14
t OLZ
0
0
ns
3
t T
1
1
ns
2
t RP
30
40
ns
t RAS
50
60
ns
t RSH
7
10
ns
t CSH
35
40
ns
t CAS
7
10
ns
t RCD
11
14
ns
4
t RAD
9
12
ns
10
t CRP
5
5
ns
t ASR
0
0
ns
t RAH
7
10
ns
t ASC
0
0
ns
t CAH
7
10
ns
t RAL
25
30
ns
t RCS
0
0
ns
t RCH
0
0
ns
8
t RRH
0
0
ns
8
t WCH
7
10
ns
t WP
7
10
ns
t RWL
7
10
ns
t CWL
7
10
ns
t DS
0
0
ns
9
t DH
7
10
ns
9
t REF
32
32
ms
t REF
128
128
ms
t WCS
0
0
ns
7