
NT3882
4
The truth table is listed as follows:
Latched Data
M
Output level of S1 to S40
1(High)
1(High)
V
EE
(Selected)
0(Low)
V
DD
0(Low)
1(High)
V
3
(Nonselected)
0(Low)
V
2
Absolute Maximum Ratings*
Power Supply Voltage (V
DD
-GND) . . . . . . . -0.3V to 7.0V
Power Supply Voltage (V
DD
-V
EE
) . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . V
DD
- 13.5V to V
DD
+ 0.3V
Input Voltage . . . . . . . . . . . . . . . . . .-0.3V to V
DD
+ 0.3V
Operating Temperature . . . . . . . . . . . . . -20
q
C to + 75
q
C
Storage Temperature . . . . . . . . . . . . . .-55
q
C to + 125
q
C
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied or intended. Exposed to the absolute
maximum rating conditions for extended periods may
affect device reliability.
DC Electrical Characteristics
(V
DD
= 5.0V, GND = 0V, V
EE
= 0V, T
A
= 25
q
C)
Symbol
Parameter
Input Voltage
Terminal
CL1, CL2
Min.
Typ.
-
Max.
Unit
V
Conditions
V
IH
0.7 X V
DD
0
V
DD
V
IL
DL1, DL2
-
0.3 X V
DD
-
V
V
OH
Output Voltage
DR1, DR2
V
DD
- 0.4
-
-
V
I
OH
= -0.4mA
V
OL
-
0.4
V
I
OL
= 0.4mA
V
D1
Vi-Sj Voltage
Note 1
-
-
1.1
V
I
ON
= 0.1mA for one of Sj
V
D2
Descending
105
V
I
ON
= 0.05mA for each of Sj
I
IL
Input Leakage
Current
Vi Leakage
Current
Power Supply
Current
CL1, CL2
DL1, DL2
-5
-
5
P
A
V
IN
= 0 or VDD
I
VL
V
2
, V
3
, V
EE
-10
-
10
P
A
S1 to S40 open
I
DD
Note 2
-
-
200
P
A
f
CL1
= 1KH
f
CL2
= 400KHz
Note 1: V
i
- S
j
(V
i
= V
DD
, V
2
, V
3
, V
EE
; j = 1 to 40) equivalent circuit.
V
i
1Kmax.
1Kmax.
Power
Switch
Data
Swtich
S
j
Note 2: Input/output current is excluded. When the input is at the intermediate level with CMOS, some excessive current
will flow through the input circuit to the power supply. To avoid this, the input level must be fixed at a high or low
state.