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參數(shù)資料
| 型號(hào)： | NT256D64S88A0G-75B |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 184pin One Bank Unbuffered DDR SDRAM MODULE |
| 中文描述： | 一位銀行無緩沖184pin DDR SDRAM內(nèi)存模塊 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 211K |
| 代理商： | NT256D64S88A0G-75B |
NT256D64S88A0G
256MB : 32M x 64
PC2100 / PC1600 Unbuffered DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
( T
A
= 0 °C ~ 70 °C ; V
DDQ
= 2.5V ± 0.2V; V
DD
= 2.5V ± 0.2V, See AC Characteristics)
(Part 2 of 2)
Preliminary
08 / 2001
12
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
-7K
-75B
-8B
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Notes
t
IS
Address and control input setup time
(slow slewrate)
1.0
1.0
1.1
ns
2, 3, 4,
10, 11,
12, 14
2, 3, 4,
12
t
IPW
Input pulse width
2.2
2.2
-
ns
t
RPRE
Read preamble
0.9
1.1
0.9
1.1
0.9
1.1
t
CK
1,2,3,4
t
RPST
Read postamble
0.40
0.60
0.40
0.60
0.40
0.60
t
CK
1,2,3,4
t
RAS
Active to Precharge command
45
120,000
45
120,000
50
120,000
ns
1,2,3,4
t
RC
Active to Active/Auto-refresh
command period
65
65
70
ns
1,2,3,4
t
RFC
Auto-refresh to Active/Auto-refresh
command period
75
75
80
ns
1,2,3,4
t
RCD
Active to Read or Write delay
20
20
20
ns
1,2,3,4
t
RAP
Active to Read Command with
Autoprecharge
20
20
20
ns
1,2,3,4
t
RP
Precharge command period
20
20
20
ns
1,2,3,4
t
RRD
Active bank A to Active bank B
command
15
15
15
ns
1,2,3,4
t
WR
Write recovery time
15
(t
WR
/
t
CK
)
+
15
(t
WR
/
t
CK
)
+
15
(t
WR
/
t
CK
)
+
ns
1,2,3,4
t
DAL
Auto precharge write recovery +
precharge time
(t
RP
/
t
CK
)
(t
RP
/
t
CK
)
(t
RP
/
t
CK
)
t
CK
1, 2, 3,
4, 13
t
WTR
Internal write to read command delay
1
1
1
t
CK
1,2,3,4
t
XSNR
Exit self-refresh to non-read
command
75
75
80
ns
1,2,3,4
t
XSRD
Exit self-refresh to read command
200
200
200
t
CK
1,2,3,4
1, 2, 3,
t
REFI
Average Periodic Refresh Interval
7.8
7.8
7.8
μs
4, 8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NT256D64S88A0G-7K | 184pin One Bank Unbuffered DDR SDRAM MODULE |
| NT256D64S88A0G-8B | 184pin One Bank Unbuffered DDR SDRAM MODULE |
| NT256D64S88A2GM | 200pin One Bank Unbuffered DDR SO-DIMM |
| NT256D64S88A2GM-75B | 200pin One Bank Unbuffered DDR SO-DIMM |
| NT256D64S88A2GM-7K | 200pin One Bank Unbuffered DDR SO-DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NT256D64S88A0G-7K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:184pin One Bank Unbuffered DDR SDRAM MODULE |
| NT256D64S88A0G-8B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:184pin One Bank Unbuffered DDR SDRAM MODULE |
| NT256D64S88A2GM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200pin One Bank Unbuffered DDR SO-DIMM |
| NT256D64S88A2GM-75B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200pin One Bank Unbuffered DDR SO-DIMM |
| NT256D64S88A2GM-7K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:200pin One Bank Unbuffered DDR SO-DIMM |
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