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參數(shù)資料
| 型號(hào)： | NSL12TT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | High Current Surface Mount PNP Silicon Transistor(高強(qiáng)度電流，表面安裝的PNP硅晶體管) |
| 中文描述： | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 463-01, SC-75, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | NSL12TT1 |
Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 2
1
Publication Order Number:
NSL12TT1/D
NSL12TT1
High Current Surface
Mount PNP Silicon
Low V
CE(sat)
Transistor for
Battery Operated
Applications
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
–12
Vdc
Collector-Base Voltage
V
CBO
–20
Vdc
Emitter-Base Voltage
V
EBO
–4.0
Vdc
Collector Current – Peak
Collector Current
– Continuous
I
C
–1.0
–0.5
Adc
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
210
1.7
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 1)
595
°
C/W
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
365
2.9
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 2)
340
°
C/W
Thermal Resistance,
Junction to Lead #3
R
θ
JL
205
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to
+150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
Device
Package
Shipping
ORDERING INFORMATION
NSL12TT1
SOT–416
http://onsemi.com
3000/Tape & Reel
DEVICE MARKING
COLLECTOR
3
1
BASE
2
EMITTER
12 VOLTS
1.0 AMPS
PNP TRANSISTOR
L2
CASE 463
SOT–416/SC–75
STYLE 1
3
2
1
L2 = Specific Device Code
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