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參數(shù)資料
| 型號(hào)： | NS32FX211N |
| 廠(chǎng)商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類(lèi)： | XO, clock |
| 英文描述： | Microprocessor Compatible Real Time C |
| 中文描述： | 0 TIMER(S), REAL TIME CLOCK, PDIP16 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-16 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 171K |
| 代理商： | NS32FX211N |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
DC Input or Output Voltage
b
0.3V to V
DD
a
0.3V
DC Input or Output Diode Current
g
5.0 mA
Storage Temperature, (T
STG
)
Supply Voltage, (V
DD
)
Power Dissipation, (P
D
)
Lead Temperature
(Soldering, 10 seconds)
b
65
§
C to
a
150
§
C
6.5V
500 mW
260
§
C
Operating Conditions
Min
4.75
2.2
0
0
§
Max
5.25
5.5
V
DD
70
§
Units
V
V
V
§
C
Operating Supply Voltage
Standby Mode Supply Voltage
DC Input or Output Voltage
Operating Temperature Range
Electrical Characteristics
V
DD
e
5V
g
5%, T
e
0
§
C to
a
70
§
C unless otherwise stated
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IH
High Level Input Voltage
(except XTAL IN)
2.0
V
V
IL
Low Level Input Voltage
(except XTAL IN)
0.8
V
V
OH
High Level Output Voltage
(DB0–DB3)
I
OH
e b
20
m
A
I
OH
e b
1.6 mA
V
DD
b
0.1
3.7
V
V
V
OH
High Level Output
Voltage (INT)
I
OH
e b
20
m
A
(In Test Mode)
V
DD
b
0.1
V
V
OL
Low Level Output Voltage
(DB0–DB3, INT)
I
OL
e
20
m
A
I
OL
e
1.6 mA
0.1
0.4
V
V
I
IL
Low Level Input Current
(AD0–AD3, DB0–DB3)
V
IN
e
V
SS
(Note 2)
b
5
b
90
m
A
I
IL
Low Level Input Current
(WR, RD)
V
IN
e
V
SS
(Note 2)
b
5
b
200
m
A
I
IL
Low Level Input
Current (CS)
V
IN
e
V
SS
(Note 2)
b
5
b
570
m
A
I
OZH
Output High Level
Leakage Current (INT)
V
OUT
e
V
DD
2.0
m
A
I
DD
Average Supply Current
All V
IN
e
V
CC
or Open Circuit
V
DD
e
2.2V (Standby Mode)
V
DD
e
5.0V (Static Mode)
4
10
1
m
A
mA
C
IN
Input Capacitance
5
10
pF
C
OUT
Output Capacitance
(Outputs Disabled)
10
pF
Note 1:
Absolute Maximum Ratings are those values beyond which damage to the device may occur. All voltages referenced to ground unless otherwise noted.
Note 2:
The DB0–DB3 and AD0–AD3 lines all have active P-channel pull-up transistors which will source current. The CS, RD, and WR lines have internal pull-up
resistors to V
DD
.
2
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