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參數(shù)資料
| 型號(hào)： | NP84N055MLE |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | NP84N055MLE |
Data Sheet D14100EJ7V0DS
2
NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
55
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Note1
Drain Current (pulse)
Note2
V
GSS
±
20
±
84
±
336
V
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
A
= 25
°
C)
Total Power Dissipation (T
C
= 25
°
C)
P
T
1.8
W
P
T
200
W
Channel Temperature
T
ch
175
°
C
°
C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to
+
175
I
AS
84/55/20
A
E
AS
70/302/400
mJ
Notes 1.
Calculated constant current according to MAX. allowable channel temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25
°
C, V
DD
= 28 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V (See
Figure 4.
)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
0.75
°
C/W
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP84N055MLE-S18-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N055NHE | 制造商:Renesas Electronics Corporation 功能描述: |
| NP84N055NHE-S18-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N055NLE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N055NLE-S18-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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