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參數(shù)資料
| 型號(hào)： | NP1800SDMCT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 浪涌電流限制器 |
| 英文描述： | 220 V, 60 A, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 129K |
| 代理商： | NP1800SDMCT3G |
NPSDMC Series
http://onsemi.com
2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
VDRM
Repetitive peak offstate voltage: Rated maximum
(peak) continuous voltage that may be applied in the
offstate conditions including all dc and repetitive
alternating voltage components.
NP0720SDMCT3G
$65
V
NP1300SDMCT3G
$120
NP1500SDMCT3G
$140
NP1800SDMCT3G
$170
NP3100SDMCT3G
$275
IPPS
Nonrepetitive peak pulse current: Rated maximum
value of peak impulse pulse current that may be
applied.
2x10 ms, GR1089CORE
1000
A
10x1000 ms, GR1089CORE
200
ITSM
Nonrepetitive peak onstate current: Rated
maximum (peak) value of ac power frequency
onstate surge current which may be applied for a
specified time or number of ac cycles.
0.0167s, 50/60 Hz, full sine wave
60
A
0.1s, 50/60 Hz, full sine wave
30
1000s, 50/60 Hz, full sine wave
2.2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)
Symbol
Rating
Min
Typ
Max
Unit
V(BO)
Breakover voltage: The maximum voltage across the device in or at the
breakdown region.
VDC = 1000 V, dv/dt = 100 V/ms
NP0720SDMCT3G
$88
V
NP1300SDMCT3G
$160
NP1500SDMCT3G
$180
NP1800SDMCT3G
$220
NP3100SDMCT3G
$350
I(BO)
Breakover Current: The instantaneous current flowing at the breakover voltage.
800
mA
IH
Holding Current: The minimum current required to maintain the device in the onstate.
150
mA
IDRM
Offstate Current: The dc value of current that results from the applica-
tion of the offstate voltage
VD = 50 V
2
mA
VD = VDRM
5
VT
Onstate Voltage: The voltage across the device in the onstate condition.
IT = 2.2 A (pk), PW = 300 ms, DC = 2%
4
V
dv/dt
Critical rate of rise of offstate voltage: The maximum rate of rise of voltage (below VDRM) that
will not cause switching from the offstate to the onstate.
Linear Ramp between 0.1 VDRM and 0.9 VDRM
±5
kV/ms
di/dt
Critical rate of rise of onstate current: rated value of the rate of rise of current which the device
can withstand without damage.
±500
A/ms
CO
Offstate Capacitance
f = 1.0 MHz, Vd = 1.0 VRMS, VD = 2 Vdc
65
pF
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
TSTG
Storage Temperature Range
65 to +150
°C
TJ
Operating Temperature Range
40 to +150
°C
R0JA
Thermal Resistance: JunctiontoAmbient Per EIA/JESD513, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
90
°C/W
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