參數(shù)資料
型號(hào): NNCD5.6LG-A
元件分類: 參考電壓二極管
英文描述: 2 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: SO-5
文件頁數(shù): 1/8頁
文件大?。?/td> 47K
代理商: NNCD5.6LG-A
This product series is a low capacitance type diode developed
for ESD (Electrostatic Discharge) absorption. Based on the
IEC1000-4-2 test on electromagnetic interference (EMI), the
diode assures an endurance of no less than 8 kV, and capacitance
is small with 10 pF between the terminal. This product series is
the most suitable for the ESD absorption in the high-speed data
communication bus such as USB.
With four elements mounted in the 5Pin Mini Mold Package,
that product can cope with high density assembling.
FEATURES
Based on the electrostatic discharge immunity test (IEC1000-
4-2), the product assures the minimum endurance of 8 kV.
Capacitance is small with 10 pF (at V
R
= 0 V, f = 1 MHz)
between the terminal. It is excellent in the frequency
characteristic.
With 4 elements mounted (common anode) in the 5-pin mini
mold package, that product can cope with high density
assembling.
APPLICATIONS
External interface circuit ESD absorption in the high-speed
data communication bus such as USB.
NNCD5.6LG to NNCD6.8LG
ESD NOISE CLIPPING DIODES
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE: COMMON ANODE)
5-PIN MINI MOLD
Document No. D12785EJ1V0DS00 (1st edition)
Date Published October 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS
(in millimeters)
1
2
3
5
4
1.5
2.8
±
0.2
2
±
0
1
0
0
0
0
+
0.65
+0.1
0
+
(5-pin mini mold)
PIN CONNECTION
5
4
1
3
2
1:
2:
3:
4:
5:
Cathode 1
Anode (Common)
Cathode 2
Cathode3
Cathode4
K1
A
K2
K3
K4
MAXIMUM RATINGS (T
A
= 25
°
C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
P
RSM
T
j
T
stg
200 mW
2W (t = 10
μ
s, 1 pulse)
150
°
C
–55
°
C to +150
°
C
(Total)
Fig.5
1998
DATA SHEET
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