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參數(shù)資料
| 型號(hào)： | NM29A080V |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | PROM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 8M X 1 FLASH 5V PROM, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | NM29A080V |
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Notifications
(1) Interruption by CS Going High
When the NM29A040/080 begins reading a page from
the array (t
R
), writing a page to the array (t
PROG
), or
erasing a block (t
BERASE
), the operation will complete
regardless of the state of CS. The CS pin may go high
during these operations. If CS is held low during these
operations the DO pin will reflect the state of the opera-
tion with a low state (busy) while the operation is being
executed. When the operation is completed, DO will pull
high to reflect the ready state.
(2) Command Reset
The NM29A040/080 command register is reset when-
ever CS changes from low to high. As long as the de-
vice is powered, the data register will continue to hold
its data. The state of CS does not affect on-going oper-
ations as described in Notification (1).
(3) Power-Up
On power-up, the NM29A040/080 is set in the write dis-
able mode. This prevents any spurious writes to the de-
vice. To enable writes or erases, the Write Enable (E0H)
command must be given. At power-up, the 32-byte shift
register will contain unknown data.
(4) Multiple Programs to a Page
It is possible to program a page more than one time
between block erases. However, each bit (cell) may
only be programmed once. (Once data has been
changed fro a ‘‘1’’ to a ‘‘0’’, a block erase operation is
required to change the data back to a ‘‘1’’.) After a block
is erased, all bytes will read as ‘‘FFH’’. When less than
32 bytes need to be programmed into a page, the re-
maining bytes may be masked by writing ‘‘FFH’’ to
those locations. In this way the cells are not changed
from their erased states. Later, these bytes can be pro-
grammed with the desired data. It is suggested that the
number of writes to a page between block erases be
held to as few as possible.
Program
1st
Byte 0–7
Byte 8–15
Byte 16–23
Byte 24–31
Data
FFH
FFH
FFH
Program
2nd
Byte 0–7
Byte 8–15
Byte 16–23
Byte 24–31
FFH
Data
FFH
FFH
FIGURE 11. Multiple Page Program
(5) Identification of Unusable Blocks
The NM29A040/080 may contain unusable blocks.
These unusable blocks are due to bit errors in the block.
An unusable block will not affect adjacent blocks. The
location of these blocks may be found pre-programmed
in Block 127 (4 Mb) or 254 (8 Mb). Each page in Block
127 or 254 corresponds to a block in the array at a
similar address. For example, Page 3 in Block 127
corresponds to Block 3. If Block 3 is a usable block, then all
bytes in Page 3 of Block 127 will read out ‘‘FFH’’. If Block 3
is an unusable block, then some of the bytes in Page 3 of
Block 127 will read out data other than ‘‘FFH’’. For custom-
ers using the NM29A040/080 with the NSAM266 speech
processor, the CompactSPEECH embedded software auto-
matically locates the unusable blocks and works around
these locations when performing Read, Write and Erase op-
erations.
http://www.national.com
8
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