參數(shù)資料
型號: NM29A080M
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: PROM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 8M X 1 FLASH 5V PROM, PDSO28
封裝: 0.350 INCH, PLASTIC, SOIC-28
文件頁數(shù): 4/14頁
文件大?。?/td> 218K
代理商: NM29A080M
Device Operation
The basic functions required for storing messages or im-
ages on the NM29A040/080 are Page Read, Page Write,
and Block Erase. These functions can be implemented by
combining the different instructions for the NM29A040/080
in the following sequences.
PAGE READ
Page Read will read out the 32 bytes of a page for the
specified address. To continue reading the page at the next
address, an Increment command (90H) can be issued. In
this way the system can avoid repeatedly using the three
byte Set-Address command. The Increment command is
then followed by the Read command and proceeds in the
same manner as shown in Figure 2.
TL/D/12475–5
FIGURE 2. Page Read Sequence
PAGE WRITE
Page Write sequence will write up to 32 bytes into a speci-
fied page. Like the Page Read sequence, the Increment
command can be used to quickly set the address to the next
page for writing data sequentially into a block.
TL/D/12475–6
FIGURE 3. Page Write Sequence
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