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參數(shù)資料
| 型號： | NM29A040V |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | PROM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4M X 1 FLASH 5V PROM, PQCC28 |
| 封裝： | PLASTIC, LCC-28 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 218K |
| 代理商： | NM29A040V |
Instruction Set
(Continued)
ERASE
The Erase command erases a single block. The Erase com-
mand is followed by a single byte telling which block to
erase. In this manner, no Set-Address sequence is required
to erase a block. Following the block address byte is a sin-
gle byte security code, 55H, that is used to prevent inadver-
tent erasure. Get-Status may be used to check if the opera-
tion was completed successfully. At the completion of the
Erase command, the selected address is undetermined. A
Set-Address command is required before any subsequent
Read or Write.
DATA-SHIFT-IN
The Data-Shift-In command is used to send data into the
on-chip buffer. The number of bits sent into the buffer is
determined by an 8-bit argument following the command.
The argument is always 1 less than the actual number of
bits to shift in. For example, to shift in all 32 bytes (256 bits),
the argument would be FFH (255). To shift in just 4 bytes
(32 bits), the argument would be 1FH (31). Following the
argument, the data is shifted in through DI. Data-Shift-In
may come before or after the Set-Address sequence when
performing a page write operation.
DATA-SHIFT-OUT
The Data-Shift-Out command is used to shift data out of the
on-chip buffer through DO. The number of bits sent out is
determined by an 8-bit argument following the command.
The argument is always 1 less than the actual number of
bits to shift out. For example, to shift out all 32 bytes (256
bits), the argument would be FFH (255). To shift out 2 bytes
(16 bits), the argument would be 0FH (15). Following the
argument, the data is shifted out through DO. Data shifted
out during this command is also internally shifted back into
the data register. Thus after shifting all 256 bits, the con-
tents of the data register remain unchanged.
WRITE ENABLE
The Write Enable command is used as a security check
against inadvertent writes or erases to the device. When
this command is issued, any subsequent Write or Erase
commands proceed in the normal fashion. If the Write En-
able command is not given or the device is in the Write
Disable mode then a write to any page or erase to any block
will not be allowed. Use the Get-Status command to deter-
mine whether the device currently is in the Write Enabled or
Disabled mode. The NM29A040/080 will always power up
in the Write Disable mode. This command may be issued
while the device is busy. Any change in the Write Enable
status will affect the next write or erase operation that is
issued.
WRITE DISABLE
The Write Disable command is used to prevent inadvertant
writes or erases. Once this command is executed, all subse-
quent Write or Erase commands will not be accepted. This
command may be issued while the device is busy. Any
change in the Write Enable status will affect the next write
or erase operation that is issued.
READ LAST BLOCK
The Read Last Block command is used to read the contents
of Block 127 (4-Mbit) or Block 254 (8-Mbit). The Read Last
Block operation proceeds like a normal read operation ex-
cept that the block number is ignored in the Set-Address
sequence. The block address is automatically set to Block
127 or 254. The Set-Address command is still necessary to
set the page to be read. In the case of the 8M, the page
address can range from 0–255 for purposes of reading or
writing the last block.
WRITE LAST BLOCK
The Write Last Block command writes a page of data to the
currently selected page of Block 127 or 254. The Write Last
Block command operates like a normal write command ex-
cept the block number is ignored in the Set-Address se-
quence. The block address is automatically set to Block 127
or 254. The Set-Address command is still necessary to set
the page to be written. In the case of the 8M, the page
address can range from 0–255 for purposes of reading or
writing the last block. The Write Last Block command is
followed by a security code (55H). Once the information has
been written into the memory array, it may not be erased.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NM29A080 | 4 Mbit Uniform Sector, Serial Flash Memory |
| NM29A080EM | 4 Mbit Uniform Sector, Serial Flash Memory |
| NM29A080EV | 4 Mbit Uniform Sector, Serial Flash Memory |
| NM29A080M | 4 Mbit Uniform Sector, Serial Flash Memory |
| NM29A080V | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NM29A080 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4-Mbit/8-Mbit CMOS Serial FLASH E2PROM |
| NM29A080EM | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4-Mbit/8-Mbit CMOS Serial FLASH E2PROM |
| NM29A080EV | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4-Mbit/8-Mbit CMOS Serial FLASH E2PROM |
| NM29A080M | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4-Mbit/8-Mbit CMOS Serial FLASH E2PROM |
| NM29A080V | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4-Mbit/8-Mbit CMOS Serial FLASH E2PROM |
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