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參數(shù)資料
| 型號： | NM27C512V |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 524,288-Bit (64K x 8) High Performance CMOS EPROM |
| 中文描述： | 524,288位（64K的× 8）高性能CMOS存儲(chǔ)器 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 121K |
| 代理商： | NM27C512V |
4
www.fairchildsemi.com
N
Capacitance
T
A
= +25
°
C, f = 1 MHz (Note 2)
Symbol
Parameter
Conditions
Typ
Max
Units
C
IN1
Input Capacitance
except OE/V
PP
V
IN
= 0V
6
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
9
12
pF
C
IN2
OE/V
Input
Capacitance
V
IN
= 0V
20
25
pF
AC Test Conditions
Output Load
1 TTL Gate and C
L
= 100 pF (Note 8)
Input Rise and Fall Times
≤
5 ns
Input Pulse Levels
0.45V to 2.4V
Timing Measurement Reference Level (Note 9)
Inputs
Outputs
0.8V and 2V
0.8V and 2V
AC Waveforms
(Notes 6, 7)
Note 1:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Note 2:
This parameter is only sampled and is not 100% tested.
Note 3:
OE may be delayed up to t
ACC
–t
OE
after the falling edge of CE without impacting t
ACC
.
Note 4:
The t
and t
compare level is determined as follows:
High to TRI-STATE, the measured V
OH1
(DC) - 0.10V;
Low to TRI-STATE, the measured V
OL1
(DC) + 0.10V.
Note 5:
TRI-STATE may be attained using OE or CE .
Note 6:
The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1
μ
F ceramic capacitor be used on every device
between V
CC
and GND.
Note 7:
The outputs must be restricted to V
CC
+ 1.0V to avoid latch-up and device damage.
Note 8:
1 TTL Gate: I
OL
= 1.6 mA, I
OH
= -400
μ
A. C
L
: 100 pF includes fixture capacitance.
Note 9:
Inputs and outputs can undershoot to -2.0V for 20 ns Max.
Address Valid
Valid Output
Hi-Z
2V
0.8V
2V
0.8V
2V
0.8V
ADDRESS
OUTPUT
CE
OE
t
CE
2V
0.8V
(Note 3)
(Note 3)
t
DF
(Note 4, 5)
(Note 4, 5)
t
OH
Hi-Z
t
OE
ACC
t
CF
t
DS010834-4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NM27C512V120 | 功能描述:IC OTP 512KBIT 120NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| NM27C512V-120 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| NM27C512V150 | 制造商:Texas Instruments 功能描述:NEW |
| NM27C512V-150 | 制造商:Texas Instruments 功能描述: |
| NM27C512V200 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:524,288-Bit (64K x 8) High Performance CMOS EPROM |
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