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參數(shù)資料
| 型號(hào)： | NLB-400-T1 |
| 廠(chǎng)商： | RF MICRO DEVICES INC |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz |
| 中文描述： | 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, MICRO-X-4 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 272K |
| 代理商： | NLB-400-T1 |
3
G
A
H
3-24
NLB-400
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent
damage.
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
Small Signal Power Gain, S21
V
D
=+3.9V, I
CC
=47mA, Z
0
=50
Ω
, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=0.1GHz to 2.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
16.0
17.0
13.0
11.5
±0.65
1.65:1
1.65:1
1.75:1
1.5:1
1.9:1
2.2:1
4.7
dB
dB
dB
dB
10.8
Gain Flatness, GF
Input VSWR
Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
GHz
12.0
14.6
4.1
+29.6
+27.3
-18
3.9
dBm
dBm
dB
dBm
f=2.0GHz
f=6.0GHz
f=3.0GHz
f=2.0GHz
f=6.0GHz
f=0.1GHz to 12.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δ
G
T
/
δ
T
MTTF versus Temperature
@ I
CC
=50mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
dB
V
3.6
4.2
-0.0015
dB/°C
85
119
°C
°C
>1,000,000
hours
185
°C/W
J
-------–
T
V
D
I
CC
θ
JC
°
C Watt
(
)
=
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
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