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參數(shù)資料
| 型號(hào)： | NLB-310-T3T |
| 廠商： | RF Micro Devices, Inc. |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz |
| 中文描述： | 級(jí)聯(lián)寬帶GaAs MMIC放大器直流到10GHz |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | NLB-310-T3T |
4-140
NLB-310
Rev A6 040409
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent damage.
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
Small Signal Power Gain, S21
V
D
=+4.6V, I
CC
=50mA, Z
0
=50
, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=5.0GHz to 10.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 11.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 11.0GHz
12.0
12.7
10.7
10.0
9.7
9.6
±0.3
1.6:1
1.75:1
1.6:1
1.5:1
1.8:1
1.6:1
dB
dB
dB
dB
dB
dB
8.5
Gain Flatness, GF
Input VSWR
Output VSWR
Output Power @
-1dB Compression, P1dB
12.6
14.9
13.1
5.0
+28.9
+27.9
-17
4.6
-0.0015
dBm
dBm
dBm
dB
dBm
f=2.0GHz
f=6.0GHz
f=10.0GHz
f=3.0GHz
f=2.0GHz
f=6.0GHz
f=0.1GHz to 20.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δ
G
T
/
δ
T
MTTF versus Temperature
@ I
CC
=50mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
dB
V
4.4
4.8
dB/°C
85
125
°C
°C
>1,000,000
hours
174
°C/W
J
-------–
T
V
D
I
CC
θ
JC
°
C Watt
(
)
=
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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