- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361123 > NLB-300-T1 (RF MICRO DEVICES INC) CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz PDF資料下載
參數(shù)資料
| 型號： | NLB-300-T1 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz |
| 中文描述： | 0 MHz - 10000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, PLASTIC, MICRO-X-4 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 204K |
| 代理商： | NLB-300-T1 |
4-132
NLB-300
Rev A7 040409
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent damage.
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
Small Signal Power Gain, S21
V
D
=+3.8V, I
CC
=50mA, Z
0
=50
, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=5.0GHz to 10.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
12.0
13.0
10.7
8.9
8.9
8.5
±0.1
2.2:1
2.8:1
2.0:1
2.2:1
2.9:1
2.4:1
dB
dB
dB
dB
dB
dB
8.5
Gain Flatness, GF
Input VSWR
Output VSWR
Output Power @
-1dB Compression, P1dB
11.1
14.1
12.7
4.9
+28.6
+27.0
-16
3.8
-0.0015
dBm
dBm
dBm
dB
dBm
f=2.0GHz
f=6.0GHz
f=10.0GHz
f=3.0GHz
f=2.0GHz
f=6.0GHz
f=0.1GHz to 20.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δ
G
T
/
δ
T
MTTF versus Temperature
@ I
CC
=50mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
dB
V
3.6
4.2
dB/°C
85
113
°C
°C
>1,000,000
hours
147
°C/W
J
-------–
T
V
D
I
CC
θ
JC
°
C Watt
(
)
=
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NLB-300-T3 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz |
| NLC565050T-100K-S | SMD Wire Wound Ferrite Chip Inductors - NLC565050 Series |
| NLC565050 | SMD Wire Wound Ferrite Chip Inductors - NLC565050 Series |
| NLC565050T-101K-S | SMD Wire Wound Ferrite Chip Inductors - NLC565050 Series |
| NLC565050T-820K-S | SMD Wire Wound Ferrite Chip Inductors - NLC565050 Series |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NLB-300-T3 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz |
| NLB-310 | 制造商:RFMD 功能描述:AMP RF GAIN BLOCK 10GHZ 4MICRO-X |
| NLB-310- | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz |
| NLB-310_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz |
| NLB-310_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。