參數(shù)資料
型號(hào): NLAST4599
廠商: ON SEMICONDUCTOR
英文描述: Low Voltage Single Supply SPDT Analog Switch
中文描述: 低電壓?jiǎn)坞娫碨PDT模擬開關(guān)
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 120K
代理商: NLAST4599
NLAST4599
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Max Limit
V
CC
V
IS
-55 to 25 C
<85 C
<125 C
Symbol
Parameter
Test Conditions
(V)
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
t
ON
Turn-On Time
(Figures 12 and 13)
R
L
= 300
(Figures 5 and 6)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5
5
2
2
23
16
11
9
28
21
16
14
5
5
2
2
30
25
20
20
5
5
2
2
30
25
20
20
ns
t
OFF
Turn-Off Time
(Figures 12 and 13)
R
L
= 300
(Figures 5 and 6)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
7
5
4
3
12
10
9
8
1
1
1
1
15
15
12
12
1
1
1
1
15
15
12
12
ns
t
BBM
Minimum
Break-Before-Make Time
Break Before Make Time
V
IS
= 3.0 V (Figure 4)
R
L
= 300
= 35 pF
C
L
= 35 F
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
12
11
6
5
1
1
1
1
1
1
1
1
ns
*Typical Characteristics are at 25 C.
Typical @ 25, VCC = 5.0 V
C
IN
C
NO
or
C
NC
C
COM
C
(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
Typical
Symbol
Parameter
Condition
V
25
°
C
Unit
BW
Maximum On-Channel -3dB Bandwidth or
Minimum Frequency Response
(Figure 10)
0 dBm
V
IN
=
V
IN
centered between V
CC
and GND
(Figure 7)
3 0
3.0
4 5
4.5
5 5
5.5
170
200
200
MHz
V
ONL
Maximum Feedthrough On Loss
0 dBm @ 100 kHz to 50 MHz
V
IN
=
IN
CC
V
centered between V
and GND
(Figure 7)
3.0
4.5
5.5
-2
-2
-2
dB
V
ISO
Off-Channel Isolation
Off Channel Isolation
(Figure 10)
f = 100 kHz; V
f = 100 kHz V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
-93
-93
-93
dB
Q
Charge Injection Select Input to
Charge Injection Select In ut to
Common I/O
(Figure 15)
( g
V
IN =
V
CC to
GND, F
IS
= 20 kHz
= t
= 3 ns
t
r
t
f
3 ns
R
= 0 , C
= 1000 pF
C *
Q = C
*
V
OUT
(Figure 8)
3.0
5.5
1.5
3.0
pC
IS
L
THD
Total Harmonic Distortion
THD + Noise
(Figure 14)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600 ,
C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave
5.5
0.1
%
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