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參數(shù)資料
| 型號： | NLAS5223_06 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Ultra−Low 0.5 ohm Dual SPDT Analog Switch |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 121K |
| 代理商： | NLAS5223_06 |
NLAS5223, NLAS5223L
http://onsemi.com
6
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
Test Conditions
V
CC
(V)
V
IS
(V)
Guaranteed Maximum Limit
Unit
25
°
C
40
°
C to
+
85
°
C
Min
Typ
*
Max
Min
Max
t
ON
TurnOn Time
R
= 50 , C
= 35 pF
(Figures 3 and 4)
2.3 3.6
1.5
50
60
ns
t
OFF
TurnOff Time
R
L
= 50 , C
L
= 35 pF
(Figures 3 and 4)
2.3 3.6
1.5
30
40
ns
t
BBM
Minimum BreakBeforeMake
Time
V
IS
= 3.0
R
= 50 , C
L
= 35 pF
(Figure 2)
3.0
1.5
2
15
ns
Typical @ 25, V
CC
= 3.6 V
C
IN
Control Pin Input Capacitance
3.5
pF
C
NO/NC
NO, NC Port Capacitance
75
pF
C
COM
*Typical Characteristics are at 25
°
C.
COM Port Capacitance When Switch is Enabled
240
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
V
CC
(V)
25
°
C
Unit
Typical
BW
Maximum OnChannel 3 dB
Bandwidth or Minimum
Frequency Response
V
IN
centered between V
CC
and GND
(Figure 5)
1.65 3.6
17
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
= 0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 5)
1.65 3.6
0.06
dB
V
ISO
OffChannel Isolation
f = 100 kHz; V
= 1 V RMS; C
= 5.0 pF
V
IN
centered between V
CC
and GND (Figure 5)
1.65 3.6
65
dB
Q
Charge Injection Select Input to
Common I/O
V
IN =
V
CC to
GND, R
IS
= 0 W, C
L
= 1.0 nF
Q = C
L
x DV
OUT
(Figure 6)
1.65 3.6
38
pC
THD
Total Harmonic Distortion
THD + Noise
F
IS
= 20 Hz to 20 kHz, R
L
= R
gen
= 600 , C
L
= 50 pF
V
IS
= 2.0 V RMS
3.0
0.12
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; V
= 1.0 V RMS, C
= 5.0 pF, R
L
= 50
V
IN
centered between V
CC
and GND (Figure 5)
1.65 3.6
70
dB
10.OffChannel Isolation = 20log10 (V
COM
/V
NO
), V
COM
= output, V
NO
= input to off switch.
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