參數(shù)資料
型號(hào): NLAS4783MN1R2G
廠商: ON SEMICONDUCTOR
元件分類: 多路復(fù)用及模擬開關(guān)
英文描述: Triple SPDT 1.0 ohm RON Switch
中文描述: TRIPLE 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO16
封裝: 3 X 3 MM, 0.85 MM HEIGHT, LEAD FREE, QFN-16
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 92K
代理商: NLAS4783MN1R2G
NLAS4783
http://onsemi.com
4
DC CHARACTERISTICS Digital Section
(Voltages Referenced to GND)
Symbol
Parameter
Condition
V
CC
1.65
2.73.6
Guaranteed Limit
Unit
40 C to 25 C
85 C
V
IH
Minimum HighLevel Input
Voltage, Select Inputs
1.0
1.4
1.0
1.4
V
V
IL
Maximum LowLevel Input
Voltage, Select Inputs
1.65
2.73.6
0.4
0.5
0.4
0.5
V
I
IN
Maximum Input Leakage
Current, Select Inputs
V
IN
= 3.6 V or GND
3.6
0.1
1.0
A
I
OFF
Power Off Leakage Current
V
IN
= 3.6 V or GND
0
0.5
2.0
A
I
CC
Maximum Quiescent Supply
Current (Note 3)
Select and V
IS
= V
CC
or GND
1.65 to 3.6
1.0
2.0
A
DC ELECTRICAL CHARACTERISTICS Analog Section
Symbol
Parameter
Condition
V
CC
Guaranteed Maximum Limit
Unit
40 C to 25 C
85 C
Min
Max
Min
Max
R
ON
NC/NO OnResistance
(Note 3)
V
IN
V
IS
= GND to V
CC
I
IN
I
100 mA
V
IL
or V
IN
V
IH
2.7 3.6
1.0
1.2
R
FLAT
NC/NO OnResistance Flatness
(Notes 3, 5)
I
COM
= 100 mA
V
IS
= 0 to V
CC
2.7 3.6
0.2
0.2
R
ON
OnResistance Match Between Channels
(Notes 3 and 4)
V
IS
= 1.3 V;
I
COM
= 100 mA
2.7 3.6
0.4
0.6
I
NC(OFF)
I
NO(OFF)
NC or NO Off Leakage Current (Note 3)
V
IN
= V
IL
or V
IH
V
NO
or V
= 0.3 V
V
COM
= 3.3 V
3.6
5.0
5.0
10
10
nA
I
COM(ON)
COM ON
Leakage Current
(Note 3)
V
IN
= V
IL
or V
IH
V
NO
0.3 V or 3.3 V with
V
NC
floating or
V
NC
0.3 V or 3.3 V with
V
NO
floating
V
COM
= 0.3 V or 3.3 V
3.6
10
10
100
100
nA
3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
4.
R
ON =
R
ON(MAX)
R
ON(MIN)
between NC1 and NC2 or between NO1 and NO2.
5. Flatness is defined as the difference between the maximum and minimum value of onresistance as measured over the specified analog
signal ranges.
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