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參數(shù)資料
| 型號： | NLAS4685FCT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | Ultra−Low Resistance Dual SPDT Analog Switch |
| 中文描述： | 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PBGA10 |
| 封裝： | MICROBUMP-10 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 100K |
| 代理商： | NLAS4685FCT1 |
NLAS4685
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
Test Conditions
V
CC
(V)
V
IS
(V)
Guaranteed Maximum Limit
Unit
55 C to 25 C
85 C
125 C
Min
Typ*
Max
Min
Max
Min
Max
t
ON
TurnOn Time
R
L
= 50
(Figures 2 and 3)
C
L
= 35 pF
2.5
3.0
5.0
1.3
1.5
2.8
55
50
30
65
60
35
70
60
35
ns
t
OFF
TurnOff Time
R
L
= 50
(Figures 2 and 3)
C
L
= 35 pF
2.5
3.0
5.0
1.3
1.5
2.8
55
50
25
65
60
30
70
60
30
ns
t
BBM
Minimum BreakBeforeMake
Time
V
IS
= 3.0
R
= 300
(Figure 1)
C
L
= 35 pF
3.0
1.5
2
15
ns
Typical @ 25, V
CC
= 5.0 V
V
CC
= 3.0 V
C
NC
Off
C
NO
Off
C
NC
On
C
NO
On
NC Off Capacitance, f = 1 MHz
NO Off Capacitance, f = 1 MHz
NC On Capacitance, f = 1 MHz
NO On Capacitance, f = 1 MHz
208
102
547
431
pF
*Typical Characteristics are at 25
°
C.
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted) (Note 6)
Symbol
Parameter
Condition
V
CC
V
Typical
Unit
25 C
BW
Maximum OnChannel 3dB
Bandwidth or Minimum Frequency
Response
V
IN
=
0 dBm
V
IN
centered between V
CC
and GND
(Figure 4)
NC/NO
3.0
11.5
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 4)
3.0
0.05
dB
V
ISO
OffChannel Isolation
f = 100 kHz; V
IS
=
1 V RMS; C
L
= 5 nF
V
IN
centered between V
CC
and GND(Figure 4)
3.0
65
dB
Q
Charge Injection Select Input to
Common I/O
V
IN =
V
CC to
GND, R
IS
= 0 , C
L
= 1 nF
Q = C
L
V
OUT
(Figure 5)
3.0
5.0
15
20
pC
THD
Total Harmonic Distortion
THD + Noise
F
IS
= 20 Hz to 20 kHz, R
L
= R
gen
= 600 , C
L
= 50 pF
V
IS
=
1 V RMS
3.0
0.14
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; V
=
1 V RMS,
C
= 5 pF, R
= 50
V
IN
centered between V
CC
and GND (Figure 4)
3.0
81
dB
5. OffChannel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
6. 40
°
C specifications are guaranteed by design.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NLAS4685FCT1G | 功能描述:模擬開關(guān) IC Dual SPDT Analog Sw. Low R(on) Ind. Temp RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| NLAS4717 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4.5 ohm High Bandwidth, Dual SPDT Analog Switch |
| NLAS4717/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage Dual SPDT Analog Switch |
| NLAS4717EP | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4.5 ohm High Bandwidth, Dual SPDT Analog Switch |
| NLAS4717EPFCT1G | 功能描述:模擬開關(guān) IC Dual SPDT Analog Sw. Industrial Temp RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
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