參數(shù)資料
型號： NLAS44599-D
廠商： ON SEMICONDUCTOR
英文描述： Low Voltage Single Supply Dual DPDT Analog Switch
中文描述： 低電壓單電源雙DPDT模擬開關(guān)
文件頁數(shù)： 5/12頁
文件大小： 94K
代理商： NLAS44599-D
NLAS44599
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Maximum Limit
V
CC
(V)
V
IS
(V)
55 C to 25 C
85 C
125 C
Symbol
Parameter
Test Conditions
Min
Typ*
Max
Min
Max
Min
Max
Unit
t
ON
TurnOn Time
(Figures 12 and 13)
R
L
= 300
(Figures 5 and 6)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5
5
2
2
23
16
11
9
35
24
16
14
5
5
2
2
38
27
19
17
5
5
2
2
41
30
22
20
ns
t
OFF
TurnOff Time
(Figures 12 and 13)
R
L
= 300
(Figures 5 and 6)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
7
5
4
3
12
10
6
5
1
1
1
1
15
13
9
8
1
1
1
1
18
16
12
11
ns
t
BBM
Minimum BreakBeforeMake
Time
V
IS
= 3.0 V (Figure 4)
R
L
= 300
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
12
11
6
5
1
1
1
1
1
1
1
1
ns
Typical @ 25, V
CC
= 5.0 V
pF
C
IN
C
NO
or
C
NC
C
COM
C
(ON)
*Typical Characteristics are at 25
°
C.
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8
10
10
20
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
V
Typical
Symbol
Parameter
Condition
25 C
Unit
BW
Maximum OnChannel 3dB
Bandwidth or Minimum Frequency
Response (Figure 11)
V
IN
=
0 dBm
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
145
170
175
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
3
3
3
dB
V
ISO
OffChannel Isolation (Figure 10)
f = 100 kHz; V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
93
93
93
dB
Q
Charge Injection Select Input to
Common I/O (Figure 15)
V
IN =
V
CC to
GND, F
IS
= 20 kHz
t
r
= t
f
= 3 ns
R
IS
= 0 , C
L
= 1000 pF
Q = C
L
* V
OUT
(Figure 8)
3.0
5.5
1.5
3.0
pC
THD
Total Harmonic Distortion THD +
Noise (Figure 14)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600 , C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave
5.5
0.1
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
5.5
3.0
90
90
dB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NLAS44599DT 功能描述:模擬開關(guān) IC Dual DPDT ANLG Sw. RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
NLAS44599DTG 功能描述:多路器開關(guān) IC Dual DPDT ANLG Sw. -55 to 125deg C RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻（最大值）:7 Ohms 開啟時間（最大值）: 關(guān)閉時間（最大值）: 傳播延遲時間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16
NLAS44599DTR2 功能描述:模擬開關(guān) IC Dual DPDT ANLG Sw. RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
NLAS44599DTR2G 功能描述:模擬開關(guān) IC Dual DPDT ANLG Sw. -55 to 125deg C RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
NLAS44599MN 功能描述:模擬開關(guān) IC Dual DPDT ANLG Sw. RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
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