參數(shù)資料
型號(hào): NLAS3699
廠商: ON SEMICONDUCTOR
英文描述: Dual DPDT Ultra(雙路雙刀雙擲,超低導(dǎo)通電阻開(kāi)關(guān))
中文描述: 雙DPDT超(雙路雙刀雙擲,超低導(dǎo)通電阻開(kāi)關(guān))
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 97K
代理商: NLAS3699
NLAS3699
http://onsemi.com
4
DC CHARACTERISTICS Digital Section
(Voltages Referenced to GND)
Symbol
Parameter
Condition
V
CC
1.8
2.5
3.6
Guaranteed Limit
Unit
40 C to 25 C
85 C
V
IH
Minimum HighLevel Input
Voltage, Select Inputs
1.2
1.7
2.8
1.2
1.7
2.8
V
V
IL
Maximum LowLevel Input
Voltage, Select Inputs
1.8
2.5
3.6
0.4
0.5
1.0
0.4
0.5
1.0
V
I
IN
Maximum Input Leakage
Current, Select Inputs
V
IN
= V
CC
or GND
3.6
0.1
1.0
A
I
OFF
Power Off Leakage Current
V
IN
= V
CC
or GND
0
0.5
2.0
A
I
CC
Maximum Quiescent Supply
Current (Note 2)
Select and V
IS
= V
CC
or GND
1.65 to 3.6
1.0
2.0
A
DC ELECTRICAL CHARACTERISTICS Analog Section
Symbol
Parameter
Condition
V
CC
2.5
3.0
3.6
Guaranteed Maximum Limit
Unit
40 C to 25 C
85 C
Min
Max
Min
Max
R
ON
NC/NO OnResistance
(Note 2)
V
IN
V
IS
= GND to V
CC
I
IN
I
100 mA
V
IL
or V
IN
V
IH
0.65
0.6
0.55
0.75
0.75
0.7
R
FLAT
NC/NO OnResistance Flatness
(Notes 2, 4)
I
COM
= 100 mA
V
IS
= 0 to V
CC
2.5
3.0
3.6
0.15
0.15
0.15
0.15
0.15
0.15
R
ON
OnResistance Match Between Channels
(Notes 2 and 3)
V
IS
= 1.3 V;
I
COM
= 100 mA
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 1.8 V;
I
COM
= 100 mA
2.5
3.0
3.6
0.06
0.05
0.05
0.06
0.05
0.05
I
NC(OFF)
I
NO(OFF)
NC or NO Off Leakage Current (Note 2)
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 0.3 V
V
COM
= 3.3 V
3.6
5.0
5.0
10
10
nA
I
COM(ON)
COM ON
Leakage Current
(Note 2)
V
IN
= V
IL
or V
IH
V
NO
0.3 V or 3.3 V with
V
NC
floating or
V
NC
0.3 V or 3.3 V with
V
NO
floating
V
COM
= 0.3 V or 3.3 V
3.6
10
10
100
100
nA
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
3.
R
ON =
R
ON(MAX)
R
ON(MIN)
between nS1 or nS2.
4. Flatness is defined as the difference between the maximum and minimum value of onresistance as measured over the specified analog
signal ranges.
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