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參數(shù)資料
| 型號： | NLAS325_06 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual SPST Analog Switch, Low Voltage, Single Supply |
| 中文描述： | 雙路SPST模擬開關(guān)，低電壓，單電源 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | NLAS325_06 |
NLAS325
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Maximum Limit
V
CC
(V)
V
IS
(V)
55 C to 25 C
85 C
125 C
Symbol
Parameter
Test Conditions
Min
Typ*
Max
Min
Max
Min
Max
Unit
t
ON
TurnOn Time
(Figures 11 and 12)
R
L
= 300
(Figures 4 and 5)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5.0
5.0
2.0
2.0
23
16
11
9.0
35
24
16
14
5.0
5.0
2.0
2.0
38
27
19
17
5.0
5.0
2.0
2.0
41
30
22
20
ns
t
OFF
TurnOff Time
(Figures 11 and 12)
R
L
= 300
(Figures 4 and 5)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1.0
1.0
1.0
1.0
7.0
5.0
4.0
3.0
12
10
6.0
5.0
1.0
1.0
1.0
1.0
15
13
9.0
8.0
1.0
1.0
1.0
1.0
18
16
12
11
ns
t
BBM
Minimum BreakBeforeMake
Time
V
IS
= 3.0 V (Figure 3)
R
L
= 300
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1.0
1.0
1.0
1.0
12
11
6.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
ns
*Typical Characteristics are at 25
°
C.
Typical @ 25, V
CC
= 5.0 V
C
IN
C
NO
or
C
NC
C
COM
C
(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8.0
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
(V)
Typical
Symbol
Parameter
Condition
25
°
C
Unit
BW
Maximum OnChannel 3.0 dB
Bandwidth or Minimum Frequency
Response (Figure 10)
V
IN
=
0 dBm
V
IN
centered between V
CC
and GND
(Figure 6)
3.0
4.5
5.5
145
170
175
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND
(Figure 6)
3.0
4.5
5.5
2.0
2.0
2.0
dB
V
ISO
OffChannel Isolation (Figure 9)
f = 100 kHz; V
IS
=
1.0 V RMS
V
IN
centered between V
CC
and GND
(Figure 6)
3.0
4.5
5.5
93
93
93
dB
Q
Charge Injection Select Input to
Common I/O (Figure 14)
V
IN =
V
CC to
GND, F
IS
= 20 kHz
t
r
= t
f
= 3.0 ns
R
IS
= 0 , C
L
= 1000 pF
Q = C
L
* V
OUT
(Figure 7)
3.0
5.5
1.5
3.0
pC
THD
Total Harmonic Distortion THD +
Noise (Figure 13)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600 , C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave
5.5
0.1
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; V
IS
=
1.0 V RMS
V
IN
centered between V
CC
and GND
(Figure 6)
5.5
3.0
90
90
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NLAS325US | 功能描述:模擬開關(guān) IC 2-6V Dual SPST Sw. RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| NLAS325USG | 功能描述:模擬開關(guān) IC 2-6V Dual SPST Sw. -55 to 125deg C RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時間（最大值）: 關(guān)閉時間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| NLAS3699 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra-Low RON Switch |
| NLAS3699_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra-Low RON Switch |
| NLAS3699B | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual DPDT Ultra−Low RON Switch |
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