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參數資料
| 型號： | NLAS1053USG |
| 廠商： | ON Semiconductor |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH SPDT US8 |
| 標準包裝： | 1 |
| 功能： | 開關 |
| 電路： | 1 x SPDT |
| 導通狀態(tài)電阻： | 22 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 2 V ~ 5.5 V |
| 電流 - 電源： | 1µA |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-VFSOP（0.091"，2.30mm 寬） |
| 供應商設備封裝： | US8 |
| 包裝： | 標準包裝 |
| 產品目錄頁面： | 1131 (CN2011-ZH PDF) |
| 其它名稱： | NLAS1053USGOSDKR |
NLAS1053
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Positive DC Supply Voltage
VCC
0.5 to +7.0
V
Digital Input Voltage (Select and Inhibit)
VIN
0.5 ≤ V is ≤ +7.0
V
Analog Output Voltage (VCH or VCOM)
VIS
0.5 ≤ V is ≤ VCC +0.5
V
DC Current, Into or Out of Any Pin
IIK
50
mA
Storage Temperature Range
TSTG
65 to +150
_C
Lead Temperature, 1 mm from Case for 10 Seconds
TL
260
_C
Junction Temperature under Bias
TJ
+150
_C
Thermal Resistance
qJA
250
_C/W
Power Dissipation in Still Air at 85
_C
PD
250
mW
Moisture Sensitivity
MSL
Level 1
Flammability Rating
Oxygen Index: 30% 35%
FR
UL 94 V0 @ 0.125 in
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
VESD
> 2000
200
N/A
V
Latchup Performance
ILatchup
±300
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Characteristics
Symbol
Min
Max
Unit
Positive DC Supply Voltage
VCC
2.0
5.5
V
Digital Input Voltage (Select and Inhibit)
VIN
GND
5.5
V
Static or Dynamic Voltage Across an Off Switch
VIO
GND
VCC
V
Analog Input Voltage (CH, COM)
VIS
GND
VCC
V
Operating Temperature Range, All Package Types
TA
55
+125
°C
Input Rise or Fall Time
Vcc = 3.3 V ± 0.3 V
(Enable Input)
Vcc = 5.0 V ± 0.5 V
tr, tf
0
100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
Junction
Temperature
5C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
NORMALIZED
F
AILURE
RA
TE
1
10
100
1000
TIME, YEARS
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 2. Failure Rate versus
Time Junction Temperature
T
J=
130
°C
T
J=
1
0°
C
T
J=
100
°C
T
J=
90
°C
T
J=
80
°C
T
J=
120
°C
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