參數(shù)資料
型號： NJ903
廠商： InterFET Corporation
英文描述： Silicon Junction Field-Effect Transistor
中文描述： 硅結(jié)場效應(yīng)晶體管
文件頁數(shù)： 2/2頁
文件大小： 130K
代理商： NJ903
01/99
F-41
NJ903 Process
Silicon Junction Field-Effect Transistor
Gate Source Cutoff Voltage in Volts
Drain
Saturation
Current
in
mA
Drain Saturation Current as a Function of VGS(OFF)
500
400
300
200
100
Drain to Source Voltage in Volts
0
5
10
15
20
Drain
Current
in
mA
Drain Current as a Function of VDS
VGS = – 4 V
VGS = – 3 V
VGS = – 2 V
VGS = – 1 V
VGS = V
VGS(OFF) = 4.2 V
0
– 2
– 4
– 6
– 8
1000
800
600
400
200
Gate Source Voltage in Volts
Feedback
Capacitance
in
pF
Feedback Capacitance as a Function of VGS
– 5
– 10
– 15
– 20
40
30
20
10
Gate Source Voltage in Volts
Input
Capacitance
in
pF
Input Capacitance as a Function of VGS
– 5
– 10
– 15
– 20
80
60
40
0
20
Gate Source Cutoff Voltage in Volts
Drain
Source
(on)
Resistance
in
RDS(ON) as a Function of VGS(OFF)
0
– 2
– 4
– 6
– 8
10
8
6
4
2
VDS = 15 V
VDS = 5 V
VDS = V
VDS = 15 V
VDS = 5 V
VDS = V
Temperature in
°C
0
25
50
75
100
125
150
Leakage
Current
in
nA
Typical Gate Leakage Current
as a Function of Ambient Temperature
– 0.1
– 1
– 0.01
– 10
– 100
IGSS @ VGS = – 20 V
VDS = V
Databook.fxp
1/13/99 2:09 PM
Page F-41
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