參數(shù)資料
型號: NE94433-T1B
廠商: NEC Corp.
英文描述: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
中文描述: NPN硅晶體管振蕩器和混合機
文件頁數(shù): 4/8頁
文件大?。?/td> 58K
代理商: NE94433-T1B
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
°
C)
V
CE
= 2.5 V, I
C
= 2.5 mA
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2.5 V, I
C
= 2.5 mA)
NE94430
FREQUENCY
(MHz)
S
11
S
21
S
12
S
22
K
S
21
(dB)
12.2
11.8
11.1
10.3
9.4
8.3
7.1
6.1
5.1
4.2
3.5
0.6
-1.4
-3.0
-4.2
MAG
1
(dB)
23.8
21.1
18.7
17.4
16.3
15.4
12.8
11.3
10.1
9.1
8.2
5.4
3.7
2.1
0.8
MAG
.929
.854
.735
.608
.498
.423
.382
.355
.338
.327
.318
.308
.315
.340
.379
ANG
-13.0
-24.4
-50.1
-74.2
-96.3
-113.8
-126.3
-136.7
-145.4
-152.6
-159.5
172.6
148.6
125.9
105.4
MAG
4.051
3.892
3.591
3.285
2.956
2.607
2.273
2.013
1.803
1.630
1.490
1.071
0.851
0.710
0.614
ANG
160.3
148.7
129.9
114.9
102.1
92.2
84.7
78.4
72.9
68.0
63.5
45.4
31.3
21.1
14.8
MAG
.017
.030
.049
.060
.069
.076
.084
.091
.099
.107
.115
.157
.201
.257
.326
ANG
89.3
66.4
56.9
53.8
52.3
52.4
53.1
54.1
54.6
55.3
56.0
58.2
58.7
58.2
55.2
MAG
.977
.936
.843
.788
.756
.738
.728
.721
.717
.713
.710
.704
.702
.691
.670
ANG
-6.0
-10.9
-16.2
-18.4
-19.9
-21.8
-23.7
-25.7
-28.0
-30.2
-32.6
-43.9
-56.4
-69.1
-82.8
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
0.10
0.47
0.65
0.78
0.89
0.99
1.06
1.13
1.17
1.21
1.22
1.25
1.20
1.14
1.11
50
100
200
300
400
500
600
700
800
900
1000
1500
2000
2500
3000
.819
.740
.511
.414
.354
.326
.313
.306
.303
.302
.303 -173.3
.316
.333
.361
.401
-19.8
-38.0
-76.6
-106.3
-125.6
-138.4
-147.8
-155.6
-162.1
-167.8
7.561
6.980
5.906
4.762
3.819
3.152
2.671
2.318
2.050
1.839
1.669
1.169
0.914
0.751
0.642
154.4
138.9
117.4
101.6
91.5
84.3
78.4
73.3
68.7
64.4
60.4
43.8
30.2
20.2
13.9
.014
.025
.037
.046
.052
.064
.072
.081
.089
.098
.106
.151
.198
.259
.332
88.3
63.8
59.4
58.2
59.9
60.3
61.7
62.4
62.7
63.2
63.5
64.6
64.3
62.8
58.7
.946
.874
.771
.732
.713
.705
.701
.699
.697
.696
.695
.696
.699
.691
.672
-8.5
-13.2
-15.6
-16.4
-17.5
-19.2
-21.1
-23.2
-25.4
-27.7
-30.1
-41.4
-53.8
-66.3
-79.9
0.20
0.57
0.77
0.92
1.07
1.09
1.15
1.18
1.21
1.22
1.24
1.19
1.12
1.05
1.02
17.6
16.9
15.4
13.6
11.6
10.0
8.5
7.3
6.2
5.3
4.4
1.4
-0.8
-2.5
-3.8
27.3
24.5
22.0
20.2
17.0
15.1
13.3
12.0
10.8
9.9
9.0
6.3
4.6
3.3
2.0
163.0
141.1
119.9
100.9
V
CE
= 3 V, I
CE
= 5 mA
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE944 SERIES
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
S
22
.05 GHz
10
25
50
100
S
22
3 GHz
S
11
.05 GHz
S
11
3 GHz
120
90
5
60
30
150
180
-150
-120
-90
-60
-30
0
.5
4
3
.4
.3
S
21
0.5 GHz
S
12
3 GHz
S
21
3 GHz
2
S
12
0.5 GHz
1
.2
相關(guān)PDF資料
PDF描述
NE960R200 0.2 W X, Ku-BAND POWER GaAs MES FET
NE961R200 0.2 W X, Ku-BAND POWER GaAs MES FET
NE960R500 0.5 W X, Ku-BAND POWER GaAs MES FET
NE960R575 0.5 W X, Ku-BAND POWER GaAs MES FET
NE960R2 0.2 W X, Ku-BAND POWER GaAs MES FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE94433-T1B-A 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE94433-T1B-T43-A 功能描述:射頻雙極小信號晶體管 NPN Silicon AMP Oscilltr Transist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE94433-T1B-T44-A 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE94433-T1-T43 制造商:California Eastern Laboratories (CEL) 功能描述:NPN Silicon Amplifier and Oscillator Transistor
NE94433-T43-A 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel