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參數(shù)資料
| 型號(hào)： | NE68818-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 表面貼裝NPN硅高頻晶體管 |
| 文件頁數(shù)： | 4/19頁 |
| 文件大小： | 231K |
| 代理商： | NE68818-T1 |
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE688 SERIES
Coordinates in Ohms
Frequency in GHz
(V
CE
= 0.5 V, I
C
= 0.5 mA)
NE68819
V
CE
= 0.5 V, I
C
= 0.5 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
MAG
0.976
0.890
0.764
0.726
0.691
0.685
0.689
0.693
ANG
-16.300
-62.900
-108.300
-125.500
-159.300
174.200
150.800
129.200
MAG
1.892
1.635
1.250
1.098
0.859
0.715
0.618
0.554
ANG
164.300
125.300
86.900
72.100
43.500
22.600
6.500
-5.300
MAG
0.061
0.203
0.283
0.294
0.276
0.233
0.184
0.159
ANG
77.700
47.300
18.500
8.100
-10.800
-21.800
-23.000
-8.700
MAG
0.990
0.892
0.757
0.716
0.654
0.626
0.607
0.592
ANG
-9.700
-34.600
-56.300
-64.300
-81.500
-97.700
-115.400
-136.300
(dB)
14.916
9.060
6.451
5.723
4.931
4.870
2.208
1.042
0.096
0.229
0.428
0.518
0.722
0.946
1.257
1.553
V
CE
= 1.0 V, I
C
= 1.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.955
0.846
0.705
0.666
0.624
0.612
0.610
0.612
0.633
0.660
-18.200
-68.100
-114.900
-132.000
-165.000
169.600
147.400
127.000
87.700
50.700
3.606
2.975
2.125
1.825
1.363
1.102
0.948
0.850
0.731
0.634
164.000
127.000
92.400
79.400
53.900
34.300
17.600
3.100
-22.000
-42.500
0.047
0.153
0.205
0.210
0.200
0.181
0.171
0.189
0.312
0.434
77.800
47.200
21.600
13.300
0.700
-3.100
1.400
9.500
7.300
-14.500
0.985
0.851
0.685
0.636
0.565
0.529
0.503
0.478
0.464
0.542
-10.600
-37.000
-58.000
-65.100
-79.600
-92.900
-107.600
-125.400
-175.100
135.800
0.083
0.197
0.384
0.480
0.727
1.002
1.241
1.295
1.058
1.022
18.849
12.888
10.156
9.390
8.335
7.576
4.481
3.271
2.229
0.747
V
CE
= 3.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.902
0.706
0.558
0.528
0.496
0.484
0.480
0.485
0.518
0.579
-25.000
-86.100
-133.100
-148.700
-177.500
161.200
142.700
125.800
91.200
56.600
9.548
6.729
4.185
3.477
2.465
1.924
1.613
1.425
1.187
0.985
160.300
119.100
89.200
78.800
57.900
40.800
25.100
10.500
-17.200
-43.600
0.035
0.098
0.123
0.129
0.143
0.162
0.189
0.224
0.313
0.396
75.900
44.700
29.300
26.300
23.100
22.300
21.100
17.800
4.600
-14.900
0.964
0.708
0.500
0.448
0.383
0.349
0.324
0.295
0.256
0.342
-15.500
-47.700
-66.200
-71.400
-80.700
-89.300
-98.900
-112.300
-159.100
147.600
0.085
0.288
0.552
0.673
0.911
1.068
1.127
1.115
1.030
0.973
24.358
18.367
15.318
14.306
12.365
9.158
7.147
5.973
4.721
3.957
V
CE
= 3.0 V, I
C
= 7.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.786
0.542
0.450
0.434
0.420
0.411
0.410
0.413
0.460
0.533
-39.600
-113.500
-156.200
-169.300
167.100
149.700
134.000
120.000
89.000
54.800
18.403
9.834
5.452
4.445
3.072
2.376
1.974
1.726
1.412
1.176
151.700
106.700
82.100
73.700
55.700
40.500
25.900
12.000
-14.800
-40.600
0.031
0.073
0.097
0.109
0.143
0.180
0.220
0.262
0.347
0.413
72.000
44.700
40.800
40.500
38.100
33.900
27.700
19.900
1.500
-18.700
0.903
0.506
0.320
0.281
0.231
0.203
0.179
0.154
0.137
0.255
-25.500
-65.400
-82.200
-86.600
-93.200
-99.000
-106.000
-119.300
177.100
127.900
0.118
0.487
0.797
0.894
1.016
1.069
1.078
1.067
1.024
0.996
27.735
21.294
17.498
16.104
12.550
9.601
7.824
6.606
5.143
4.545
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
3
2
1
S
22
0.1 GHz
S
11
0.1 GHz
S
22
5 GHz
S
11
5 GHz
90
270
180
225
315
135
45
0
1
.25
S
12
0.1 GHz
S
21
5 GHz
S
21
0.1 GHz
S
12
5 GHz
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68818-T1-A | 制造商:CEL 制造商全稱:CEL 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68819 | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68819-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68819-T1 | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68819-T1-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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