參數(shù)資料
型號: NE68719
廠商: NEC Corp.
英文描述: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述: 表面貼裝NPN硅高頻晶體管
文件頁數(shù): 14/21頁
文件大?。?/td> 196K
代理商: NE68719
NE68739
V
CE
= 2.0 V, I
C
= 3.0 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
MAG
0.877
0.717
0.484
0.404
0.299
0.301
0.340
0.393
0.495
0.587
ANG
-12.300
-48.900
-87.400
-104.800
-147.400
176.200
151.300
134.900
113.600
98.400
MAG
9.280
7.832
5.716
4.907
3.585
2.784
2.293
1.939
1.500
1.227
ANG
167.700
137.800
110.300
100.700
82.300
67.900
56.000
45.800
28.400
13.100
MAG
0.020
0.070
0.107
0.119
0.145
0.169
0.194
0.219
0.270
0.316
ANG
85.100
64.500
52.300
49.500
46.300
44.900
43.500
42.000
37.300
30.900
MAG
0.976
0.829
0.618
0.542
0.409
0.327
0.271
0.236
0.219
0.265
ANG
-8.000
-27.700
-41.900
-46.100
-54.200
-62.800
-74.100
-88.400
-124.100
-157.500
(dB)
26.665
20.488
17.277
16.153
13.931
12.168
9.251
7.716
5.902
5.141
0.076
0.321
0.581
0.685
0.883
1.000
1.058
1.083
1.064
1.015
V
CE
= 2.0 V, I
C
= 5.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.804
0.570
0.326
0.252
0.179
0.201
0.257
0.311
0.423
0.524
-15.700
-55.800
-91.000
-108.300
-155.100
165.000
142.400
127.700
109.600
96.000
13.813
10.275
6.655
5.559
3.937
3.040
2.504
2.124
1.657
1.366
163.800
128.600
102.800
94.500
78.900
66.500
55.800
46.400
29.800
14.900
0.018
0.058
0.090
0.104
0.138
0.173
0.208
0.242
0.304
0.356
81.700
65.000
59.200
58.500
57.200
55.100
52.100
48.600
40.600
31.800
0.956
0.736
0.522
0.458
0.355
0.287
0.234
0.196
0.177
0.234
-10.300
-31.100
-40.500
-42.800
-48.000
-56.000
-67.800
-84.500
-129.000
-167.600
0.165
0.481
0.774
0.864
0.991
1.044
1.058
1.064
1.041
1.006
28.850
22.484
18.689
17.280
14.553
11.167
9.338
7.885
6.124
5.353
V
CE
= 2.0 V, I
C
= 20.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.473
0.222
0.113
0.106
0.145
0.209
0.269
0.329
0.437
0.535
-29.900
-83.800
-135.400
-164.400
153.400
135.300
123.800
116.000
102.500
90.900
29.491
14.470
7.915
6.422
4.407
3.357
2.745
2.314
1.786
1.461
150.100
109.000
90.200
84.300
72.500
62.200
53.000
44.500
29.200
15.100
0.014
0.044
0.079
0.097
0.140
0.182
0.222
0.258
0.321
0.368
80.300
70.800
70.200
69.200
65.200
60.400
55.000
49.600
38.900
28.600
0.843
0.475
0.321
0.283
0.217
0.163
0.124
0.110
0.161
0.254
-20.300
-40.400
-42.300
-43.300
-49.700
-63.400
-86.400
-119.900
-173.100
162.100
0.405
0.838
0.987
1.012
1.038
1.046
1.043
1.041
1.027
1.008
33.236
25.170
20.008
17.550
13.780
11.350
9.652
8.283
6.450
5.429
NE687 SERIES
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
相關PDF資料
PDF描述
NE68719-T1 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68730 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68730-T1 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68733 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68733-T1 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
NE68719-A 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE68719-T1 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE68719-T1-A 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE68730 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68730-T1 功能描述:射頻雙極小信號晶體管 DISC BY CEL 2/02 SOT-323 NPN HI FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel