參數(shù)資料
型號： NE68633-T1
廠商： NEC Corp.
英文描述： SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 表面貼裝NPN硅高頻晶體管
文件頁數(shù)： 8/11頁
文件大?。?/td> 140K
代理商： NE68633-T1
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
1
.8
.6
NE686 SERIES
NE68633
V
CE
= 1.0 V, I
C
= 1.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.951
0.916
0.793
0.723
0.560
0.415
0.304
0.222
0.100
0.095
-4.800
-20.800
-39.700
-47.500
-65.000
-78.500
-92.200
-104.600
-144.900
123.200
3.286
3.203
2.914
2.730
2.338
2.017
1.786
1.607
1.389
1.260
170.200
154.600
131.500
121.800
100.900
83.600
69.500
57.600
38.200
21.000
0.022
0.079
0.142
0.167
0.212
0.242
0.266
0.290
0.347
0.422
85.000
74.800
62.200
57.400
48.200
42.800
39.500
37.600
34.900
30.400
0.992
0.958
0.862
0.811
0.685
0.588
0.518
0.468
0.402
0.349
-4.400
-17.000
-31.200
-37.000
-48.700
-57.400
-65.000
-72.500
-87.600
-107.900
0.139
0.196
0.386
0.471
0.663
0.832
0.947
1.025
1.079
1.057
21.742
16.079
13.122
12.134
10.425
9.209
8.270
6.458
4.313
3.286
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.889
0.750
0.519
0.432
0.285
0.186
0.113
0.065
0.019
0.099
-8.500
-33.500
-53.800
-59.900
-69.900
-74.600
-78.500
-74.200
36.600
72.600
8.189
7.038 139.600
5.176
4.470
3.309
2.641
2.218
1.934
1.606
1.426
167.000
0.021
0.070
0.114
0.133
0.175
0.217
0.259
0.301
0.384
0.467
85.000
70.100
61.600
59.500
56.700
54.200
51.400
48.100
40.600
31.800
0.973
0.847
0.658
0.592
0.481
0.419
0.379
0.353
0.311
0.262
-7.600
-26.100
-39.300
-42.900
-48.700
-53.200
-58.600
-65.200
-81.600
-104.700
0.147
0.380
0.661
0.760
0.920
1.002
1.038
1.051
1.044
1.023
25.910
20.024
16.571
15.265
12.767
10.604
8.139
6.692
4.938
3.921
112.800
103.500
86.100
72.600
61.600
51.900
35.700
20.500
V
CE
= 1.0 V, I
C
= 5.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.826
0.623
0.385
0.311
0.193
0.121
0.069
0.043
0.047
0.120
-11.900
-40.600
-57.600
-61.900
-66.600
-64.700
-57.300
-32.000
46.100
65.700
11.534
8.878
5.834
4.901
3.501
2.751
2.294
1.986
1.640
1.452
163.800
130.600
104.700
96.300
81.000
69.000
58.900
49.900
34.400
19.800
0.021
0.064
0.105
0.123
0.169
0.216
0.263
0.307
0.394
0.477
84.800
69.300
64.100
63.100
60.900
58.000
54.300
50.300
41.600
32.000
0.955
0.761
0.563
0.507
0.424
0.379
0.349
0.329
0.292
0.243
-9.700
-30.000
-39.700
-41.700
-45.400
-49.200
-54.800
-61.900
-79.400
-103.700
0.176
0.507
0.796
0.877
0.986
1.029
1.043
1.049
1.034
1.016
27.398
21.421
17.448
16.004
13.163
9.999
8.138
6.761
5.066
4.066
V
CE
= 2.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.894
0.766
0.544
0.460
0.311
0.217
0.147
0.102
0.042
0.068
-7.900
-31.100
-50.100
-55.400
-63.800
-66.800
-67.800
-63.900
-34.200
52.700
8.161
7.109
5.308
4.601 105.300
3.423
2.731
2.297
2.002
1.655
1.475
167.300
141.000
114.600
0.018
0.066
0.109
0.127
0.168
0.209
0.249
0.290
0.370
0.453
84.000
71.500
62.900
60.800
57.800
55.500
52.600
49.400
42.400
34.000
0.978
0.862
0.682
0.618
0.509
0.448
0.409
0.384
0.345
0.296
-7.000
-24.300
-37.000
-40.500
-46.200
-50.500
-55.600
-61.800
-76.800
-97.100
0.161
0.372
0.650
0.749
0.908
0.990
1.028
1.042
1.038
1.018
26.565
20.323
16.875
15.590
13.091
11.162
8.616
7.129
5.306
4.311
88.000
74.700
63.800
54.100
38.200
23.200
V
CE
= 1.0 V, I
C
= 3.0 mA
Note:
1. Gain Calculation:
|S
21
|
|S
|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
Coordinates in Ohms
Frequency in GHz
(V
CE
= 1 V, I
C
= 3 mA)
20
10
5
4
3
2
1.5
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
10
1.5
.8
.6
.4
.2
5
4
3
2
1
S
11
0.1 GHz
S
22
5 GHz
S
11
5 GHz
S
22
0.1 GHz
90
270
180
225
315
135
45
0
.3
.4
.2
7.5
5
2.5
.1
S
21
5 GHz
S
12
5 GHz
S
12
0.1 GHz
S
21
0.1 GHz
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參數(shù)描述
NE68639 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-143
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NE68639-T1 制造商:CEL 制造商全稱:CEL 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
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