參數(shù)資料
型號： NE685M13
廠商： Electronic Theatre Controls, Inc.
英文描述： NECs NPN SILICON TRANSISTOR
中文描述： 鄰舍NPN硅晶體管
文件頁數(shù)： 9/17頁
文件大小： 176K
代理商： NE685M13
NE68539
V
CE
= 0.5 V, I
C
= 0.5 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
MAG
0.983
0.949
0.839
0.771
0.599
0.477
0.424
0.425
ANG
-4.600
-24.900
-49.500
-61.500
-93.900
-126.900
-160.200
171.800
MAG
1.823
1.773
1.684
1.629
1.483
1.320
1.180
1.042
ANG
MAG
0.028
0.111
0.204
0.243
0.299
0.320
0.310
0.294
ANG
83.300
71.600
56.000
47.900
31.300
18.900
9.800
4.300
MAG
0.996
0.977
0.882
0.832
0.687
0.572
0.486
0.430
ANG
-3.000
-15.000
-29.200
-35.600
-50.600
-63.000
-75.500
-88.700
(dB)
18.136
12.034
9.167
8.263
6.955
6.154
5.805
3.506
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
172.300
153.300
129.000
117.900
91.400
69.800
52.000
37.100
0.144
0.194
0.349
0.435
0.624
0.786
0.944
1.107
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 3.0 V, I
C
= 10 mA
V
CE
= 2.5 V, I
C
= 1.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
0.965
0.906
0.753
0.667
0.478
0.369
0.339
0.359
0.452
-6.400
-29.000
-56.200
-69.300
-103.100
-138.400
-173.000
160.600
126.000
3.534
3.355
3.000
2.801
2.346
1.960
1.682
1.457
1.171
171.400
151.200
126.600
116.000
91.800
73.000
57.500
44.300
22.900
0.025
0.088
0.156
0.179
0.217
0.236
0.238
0.247
0.268
86.300
71.600
55.400
48.400
36.900
28.900
25.800
23.100
23.000
0.994
0.951
0.823
0.757
0.600
0.488
0.405
0.349
0.304
-3.900
-17.600
-32.200
-38.400
-51.500
-62.100
-73.300
-85.900
-117.800
0.082
0.186
0.379
0.469
0.674
0.846
1.006
1.119
1.199
21.503
15.812
12.840
11.945
10.339
9.193
8.021
5.613
3.709
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.729
0.417
0.196
0.133
0.060
0.101
0.164
0.230
0.349
0.450
-20.700
-58.000
-81.600
-92.600
-155.000
144.800
125.900
117.000
104.600
93.100
21.452
12.831
7.430
6.128
4.250
3.281
2.687
2.295
1.808
1.506
158.500
117.900
96.000
89.300
76.100
65.500
56.400
47.600
31.300
16.700
0.016
0.044
0.077
0.092
0.133
0.171
0.207
0.246
0.311
0.367
80.400
68.700
67.000
65.700
64.000
61.200
57.300
53.400
44.000
33.500
0.933
0.639
0.472
0.426
0.357
0.303
0.249
0.208
0.160
0.199 -160.400
-12.700
-31.100
-33.200
-33.900
-37.400
-44.600
-54.500
-67.800
-112.500
0.233
0.689
0.927
0.984
1.033
1.054
1.068
1.055
1.035
1.011
31.273
24.648
19.845
18.235
13.938
11.406
9.535
8.262
6.491
5.500
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
0.982
0.921
0.775
0.700
0.502
0.364
0.300
0.309
0.401
-4.000
-24.700
-48.800
-60.600
-89.800
-122.500
-157.800
170.700
130.100
3.461
3.323
3.034
2.877
2.460
2.089
1.805
1.578
1.274
173.900
154.500
131.200
121.000
97.900
79.200
64.200
50.800
29.000
0.017
0.071
0.125
0.145
0.182
0.197
0.207
0.216
0.249
84.600
73.000
60.000
53.700
42.900
37.100
33.300
33.300
34.000
0.998
0.966
0.875
0.816
0.684
0.583
0.501
0.448
0.386
-2.900
-14.200
-25.800
-30.800
-41.100
-49.700
-58.100
-68.100
-94.100
0.109
0.195
0.363
0.452
0.658
0.834
0.996
1.100
1.146
23.088
16.703
13.851
12.976
11.309
10.255
9.405
6.713
4.768
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE685 SERIES
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2.5 V, I
C
= 1 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
S
11
3
2
1
S
22
0.1 GHz
0.1 GHz
S
22
4 GHz
S
11
4 GHz
90
270
180
225
315
135
45
0
3
2
1
.4
.3
.2
.1
S
12
0.1 GHz
S
21
4 GHz
S
21
0.1 GHz
S
12
4 GHz
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相關代理商/技術參數(shù)
參數(shù)描述
NE685M13-A 功能描述:射頻雙極小信號晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE685M13-T3 制造商:California Eastern Laboratories (CEL) 功能描述:NPN Silicon Amplifier and Oscillator Transistor
NE685M13-T3-A 功能描述:射頻雙極小信號晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE685M23 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR
NE685M33 制造商:CEL 制造商全稱:CEL 功能描述:NECs NPN SILICON TRANSISTOR
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