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參數(shù)資料
| 型號： | NE68000 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 鄰舍NPN硅高頻晶體管 |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 246K |
| 代理商： | NE68000 |
NE680 SERIES
0.11
0.21
0.42
0.53
0.77
0.99
1.13
1.18
23.0
17.1
14.2
13.2
11.5
10.4
7.1
5.8
V
CE
= 2.5 V, I
C
= 3 mA
100
400
800
1000
1500
2000
2500
3000
.907
.706
.461
.382
.238
.155
.078
.026
-14.6
-47.3
-72.5
-80.6
-95.8
-101.6
-107.6
-102.4
9.563
7.296
4.915
4.154
2.979
2.324
1.940
1.679
166.7
131.3
103.2
93.9
76.9
62.8
51.3
41.5
.018
.056
.084
.098
.131
.159
.194
.230
75.1
64.8
57.3
56.6
56.1
54.7
54.2
51.9
.983
.832
.687
.646
.585
.579
.570
.561
-8.1
-23.2
-31.8
-34.3
-37.7
-42.2
-47.0
-51.8
0.19
0.43
0.74
0.83
1.00
1.08
1.09
1.09
27.3
21.1
17.7
16.3
13.6
9.9
8.2
6.8
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE68030
V
CE
= 2.5 V, I
C
= 1 mA
FREQUENCY
(MHz)
100
400
800
1000
1500
2000
2500
3000
S
11
S
21
S
12
S
22
K
MAG
1
(dB)
MAG
.958
.907
.752
.672
.500
.371
.257
.172
ANG
-8.2
-31.4
-57.5
-68.0
-90.6
-108.7
-129.3
-154.1
MAG
3.592
3.325
2.807
2.541
2.058
1.705
1.479
1.331
ANG
171.5
148.1
121.4
110.8
89.1
71.5
57.1
45.0
MAG
.018
.065
.107
.122
.147
.157
.173
.194
ANG
82.5
70.1
55.3
50.3
43.4
41.1
43.5
46.5
MAG
.988
.949
.860
.814
.727
.687
.658
.638
ANG
-4.2
-16.3
-28.7
-33.2
-40.7
-46.7
-51.7
-56.6
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2.5 V, I
C
= 1 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
S
22
5 GHz
.4
.2
5
4
3
2
1
S
22
0.1 GHz
S
11
0.1 GHz
S
11
5 GHz
90
270
180
225
315
135
45
0
2.5
0.1
S
12
0.1 GHz
S
21
5 GHz
S
21
0.1 GHz
S
12
5 GHz
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
V
CE
= 6 V, I
C
= 10 mA
100
400
600
800
1000
1200
1400
1600
1800
2000
2500
3000
3500
4000
4500
5000
.769
.403
.281
.209
.158
.129
.087
.062
.041
.025
.022
.048
.080
.126
.161
.232
-21.7
-60.5
-70.3
-75.2
-77.4
-81.3
-81.5
-77.2
-71.7
-76.9
34.5
59.7
65.8
68.2
70.1
68.1
20.130
11.063
7.969
6.153
4.995
4.190
3.651
3.247
2.915
2.655
2.171
1.874
1.658
1.514
1.411
1.330
156.0
113.0
100.1
91.4
84.2
78.8
74.3
69.3
64.9
60.6
51.5
43.0
35.3
28.0
20.7
13.9
.015
.039
.052
.067
.079
.096
.112
.129
.142
.157
.192
.229
.270
.314
.357
.406
80.5
69.4
70.5
71.0
70.8
72.2
70.8
69.3
68.2
66.5
63.8
61.2
58.0
53.3
49.4
45.0
.936
.679
.623
.594
.582
.564
.551
.556
.555
.555
.549
.542
.530
.514
.478
.426
-10.5
-20.7
-21.3
-22.3
-23.3
-26.1
-26.6
-28.7
-30.6
-32.9
-38.7
-43.8
-50.4
-57.6
-66.2
-76.0
0.25
0.77
0.91
0.98
1.04
1.05
1.06
1.05
1.05
1.05
1.05
1.03
1.01
0.98
0.97
0.95
31.3
24.5
21.9
19.6
16.8
15.0
13.6
12.6
11.8
10.9
9.2
8.1
7.3
6.8
6.0
5.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68018 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68018-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68018-T1 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68018-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68019 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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