參數(shù)資料
型號(hào): NE5517AN
廠商: ON Semiconductor
文件頁(yè)數(shù): 7/15頁(yè)
文件大小: 0K
描述: IC AMP XCONDUCTANCE DUAL 16-DIP
產(chǎn)品變化通告: Product Obsolescence 11/Feb/2009
標(biāo)準(zhǔn)包裝: 25
放大器類(lèi)型: 跨導(dǎo)
電路數(shù): 2
輸出類(lèi)型: 推挽式
轉(zhuǎn)換速率: 50 V/µs
增益帶寬積: 2MHz
電流 - 輸入偏壓: 400nA
電壓 - 輸入偏移: 400µV
電流 - 電源: 2.6mA
電流 - 輸出 / 通道: 650µA
電壓 - 電源,單路/雙路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作溫度: 0°C ~ 70°C
安裝類(lèi)型: 通孔
封裝/外殼: 16-DIP(0.300",7.62mm)
供應(yīng)商設(shè)備封裝: 16-DIP
包裝: 管件
NE5517, NE5517A, AU5517
http://onsemi.com
15
PACKAGE DIMENSIONS
PDIP16
CASE 64808
ISSUE U
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
A
B
F
C
S
H
G
D
J
L
M
16 PL
SEATING
18
9
16
K
PLANE
T
M
A
M
0.25 (0.010)
T
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.740
0.770
18.80
19.55
B
0.250
0.270
6.35
6.85
C
0.145
0.175
3.69
4.44
D
0.015
0.021
0.39
0.53
F
0.040
0.70
1.02
1.77
G
0.100 BSC
2.54 BSC
H
0.050 BSC
1.27 BSC
J
0.008
0.015
0.21
0.38
K
0.110
0.130
2.80
3.30
L
0.295
0.305
7.50
7.74
M
0
10
0
10
S
0.020
0.040
0.51
1.01
_
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NE5517D 功能描述:跨導(dǎo)放大器 Transconductance RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517DG 功能描述:跨導(dǎo)放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube
NE5517DR2 功能描述:跨導(dǎo)放大器 Transconductance RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 封裝 / 箱體:SOIC-14 帶寬: 輸入補(bǔ)償電壓:40 mV at +/- 5 V 電源電壓-最大:+/- 5 V 電源電流: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝:Tube