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參數(shù)資料
| 型號： | NE4210M01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場效應管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 79K |
| 代理商： | NE4210M01-T1 |
The information in this document is subject to change without notice.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
1998
Document No. P13682EJ1V0DS00 (1st edition)
Date Published August 1998 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.8 dB TYP., G
a
= 11 dB TYP. at f = 12 GHz
6pin super minimold package
Gate Width: Wg = 200
μ
m
ORDERING INFORMATION
Part Number
Package
Supplying Form
Marking
NE4210M01-T1
6-pin super minimold
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation
side of the tape
V73
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
3.0
V
Drain Current
I
D
I
DSS
mA
Gate Current
I
G
100
μ
A
Total Power Dissipation
P
tot
125
mW
Channel Temperature
T
ch
125
°
C
Storage Temperature
T
stg
65 to +125
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE4210S01 | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE4210S01-A | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE4210S01-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| NE4210S01T1B | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET 4V 70mA 4-Pin Case S01 T/R 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET 4V 70mA AlGaAs HJFET 4-Pin Case S01 T/R |
| NE4210S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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