型號: | NE3512S02-T1C-A |
元件分類: | 開關 |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件頁數(shù): | 6/7頁 |
文件大小: | 525K |
代理商: | NE3512S02-T1C-A |
相關PDF資料 |
PDF描述 |
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NE3512S02-T1D | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NE3512S02-T1D-A | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NX8571SC984D-BA | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NX8570SC984D-BA | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
NX8571SC857-BA | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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NE3512S02-T1D | 制造商:CEL 制造商全稱:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR |
NE3512S02-T1D-A | 功能描述:射頻GaAs晶體管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
NE3513M04 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
NE3513M04-A | 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH LNA M04 4SMD |
NE3513M04-T2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |