參數(shù)資料
型號(hào): NE3210S01-T1
廠商: NEC Corp.
英文描述: X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
中文描述: X到Ku波段超低噪聲放大器N溝道黃建忠場(chǎng)效應(yīng)管
文件頁數(shù): 4/16頁
文件大?。?/td> 62K
代理商: NE3210S01-T1
Data Sheet P14067EJ2V0DS00
4
NE3210S01
Gain Calculations
S
21
MAG. =
S
12
k
±
k
2
– 1
= S
11
·S
22
– S
21
·S
12
S
21
MSG. =
S
12
1 + |
|
2
– |S
11
|
2
– |S
22
|
2
K =
2 |S
12
| |S
21
|
Frequency f (GHz)
1.0
0.5
0
1
30
2
N
V
DS
= 2 V
I
D
= 10 mA
4
20
6
8 10
14
24
20
16
12
8
4
A
a
N
A
a
Drain Current I
D
(mA)
G
a
NF
G
a
NF
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
15
14
13
12
11
2.0
1.5
1.0
0.5
30
20
10
0
V
DS
= 2 V
f = 12 GHz
NOISE FIGURE, ASSOCIATED GAIN vs.
FREQUENCY
相關(guān)PDF資料
PDF描述
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NE3210S01-T1-A 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET
NE3210S01-T1B 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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