參數(shù)資料
型號(hào)： NE23300
廠商： NEC Corp.
英文描述： SUPER LOW NOISE HJ FET (SPACE QUALIFIED)
中文描述： 超低噪聲黃建忠場(chǎng)效應(yīng)管（空間限定）
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 53K
代理商： NE23300
SUPER LOW NOISE HJ FET
(SPACE QUALIFIED)
NE23300
PART NUMBER
PACKAGE OUTLINE
NE23300
00 (Chip)
SYMBOLS
NF
OPT
1
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
Noise Figure, V
DS
= 2 V, I
D
= 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, V
DS
= 2 V, I
D
= 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Gain at P
1dB
, f = 12 GHz
V
DS
= 2 V, I
DS
= 10 mA
V
DS
= 2 V, I
DS
= 20 mA
Saturated Drain Current, V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage, V
DS
= 2 V, I
D
= 100
μ
A
Transconductance, V
DS
= 2 V, I
D
= 10 mA
Gate to Source Leakage Current, V
GS
= -5 V
Thermal Resistance (Channel to Case)
dB
dB
0.35
0.75
1.0
G
A
1
dB
dB
15.0
10.5
10.0
P
1dB
dBm
dBm
11.2
12.0
G
1dB
dB
dB
mA
V
mS
μ
A
°
C/W
11.8
12.8
40
-0.8
70
0.5
I
DSS
V
P
g
m
I
GSO
15
-2.0
45
80
-0.2
10
260
R
TH(CH-C)2
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
DESCRIPTION
The NE23300 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high asso-
ciated gain make it suitable for space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
FEATURES
VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
GATE LENGTH:
0.3
μ
m
GATE WIDTH:
280
μ
m
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Frequency, f (GHz)
O
O
(
A
A
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
California Eastern Laboratories
G
A
NF
4.5
3.0
2.5
2.0
4.0
3.5
1.5
1.0
0.5
0
1
10
40
6
8
10
12
14
16
18
20
22
相關(guān)PDF資料
PDF描述
NE23383B SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET (SPACE QUALIFIED)
NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE321000 Low Noise Amplifier N-Channel HJ-FET(低噪聲N溝道結(jié)型場(chǎng)效應(yīng)管)
NE321000- TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP
NE32400 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE2337-06-ROHS 制造商:TE Connectivity 功能描述:RIBBON CABLE DB37 MALE CONN 37WAY 6IN 制造商:TE Connectivity 功能描述:RIBBON CABLE, DB37 MALE CONN, 37WAY, 6IN 制造商:TE Connectivity / AMP 功能描述:RIBBON CABLE, DB37 MALE CONN, 37WAY, 6IN; Cable Length - Imperial:6"; Cable Length - Metric:152.4mm; Connector Type A:D Sub 37 Position Plug; Connector Type B:D Sub 37 Position Plug; Jacket Color:-; Cable Assembly Type:Ribbon ;RoHS Compliant: Yes
NE23383B 制造商:NEC 制造商全稱:NEC 功能描述:SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET (SPACE QUALIFIED)
NE2409-06-ROHS 制造商:TE Connectivity 功能描述:RIBBON CABLE DB9 FEMALE CONN 9WAY 6IN
NE2415-06 制造商:61285 功能描述:CONNECTORS CABLE ASSEMBLIES
NE24200 制造商:NEC 制造商全稱:NEC 功能描述:C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*