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    參數(shù)資料
    型號： NDS8410S
    廠商： FAIRCHILD SEMICONDUCTOR CORP
    元件分類： 小信號晶體管
    英文描述： Single N-Channel Enhancement Mode Field Effect Transistor
    中文描述： 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
    封裝： SO-8
    文件頁數(shù)： 2/10頁
    文件大小： 264K
    代理商： NDS8410S
    ELECTRICAL CHARACTERISTICS
    (T
    A
    = 25°C unless otherwise noted)
    Symbol
    Parameter
    Conditions
    Min
    Typ
    Max
    Units
    OFF CHARACTERISTICS
    BV
    DSS
    I
    DSS
    Drain-Source Breakdown Voltage
    V
    GS
    = 0 V, I
    D
    = 250 μA
    V
    DS
    = 24 V, V
    GS
    = 0 V
    30
    V
    Zero Gate Voltage Drain Current
    1
    μA
    T
    J
    = 55°C
    10
    μA
    I
    GSSF
    I
    GSSR
    ON CHARACTERISTICS
    (Note 2)
    Gate - Body Leakage, Forward
    V
    GS
    = 20 V, V
    DS
    = 0 V
    V
    GS
    = -20 V, V
    DS
    = 0 V
    100
    nA
    Gate - Body Leakage, Reverse
    -100
    nA
    V
    GS(th)
    Gate Threshold Voltage
    V
    DS
    = V
    GS
    , I
    D
    = 250 μA
    2
    2.2
    4
    V
    T
    J
    = 125°C
    1.4
    1.6
    2.8
    R
    DS(ON)
    Static Drain-Source On-Resistance
    V
    GS
    = 10 V, I
    D
    = 8.6 A
    0.015
    0.02
    T
    J
    = 125°C
    0.021
    0.036
    I
    D(on)
    g
    FS
    DYNAMIC CHARACTERISTICS
    On-State Drain Current
    V
    GS
    = 10 V, V
    DS
    = 5 V
    V
    DS
    = 10 V, I
    D
    = 8.6 A
    30
    A
    Forward Transconductance
    15
    S
    C
    iss
    C
    oss
    C
    rss
    SWITCHING CHARACTERISTICS
    (Note 2)
    Input Capacitance
    V
    = 15 V, V
    GS
    = 0 V,
    f = 1.0 MHz
    1105
    pF
    Output Capacitance
    790
    pF
    Reverse Transfer Capacitance
    295
    pF
    t
    D(on)
    t
    r
    t
    D(off)
    t
    f
    Q
    g
    Q
    gs
    Q
    gd
    Turn - On Delay Time
    V
    DD
    = 10 V, I
    D
    = 1 A,
    V
    GEN
    = 10 V, R
    GEN
    = 6
    11
    25
    ns
    Turn - On Rise Time
    15
    30
    ns
    Turn - Off Delay Time
    30
    60
    ns
    Turn - Off Fall Time
    20
    40
    ns
    Total Gate Charge
    V
    = 10 V,
    I
    D
    = 8.6 A, V
    GS
    = 10 V
    33
    46
    nC
    Gate-Source Charge
    6.5
    nC
    Gate-Drain Charge
    9
    nC
    NDS8410S Rev.C
    相關(guān)PDF資料
    PDF描述
    NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor（10A，30V，0.015Ω）(單N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流10A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）)
    NDS8425 Single N-Channel Enhancement Mode Field Effect Transistor
    NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor
    NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor
    NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    NDS8425 功能描述:MOSFET N-Channel MOSFET 2.5V Specified RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    NDS8425 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
    NDS8426 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single N-Channel Enhancement Mode Field Effect Transistor
    NDS8426A 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    NDS8426A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
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