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參數(shù)資料
| 型號： | NDS7002A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場效應(yīng)管) |
| 中文描述： | 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 538K |
| 代理商： | NDS7002A |
TO-92 Tape and Reel Data and Package Dimensions
September 1999, Rev. B
TO-92 Packaging
Configuration:
Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
Estd option
FSCINT Label
530mm x 130mm x
Intermediate box
83mm
per
intermediate box
FSCINT Label
114mm x 102mm x 51mm
Immediate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
DESCRIPTION
LEADCLIP
QUANTITY
J18Z
TO-18 OPTION STD
NO LEAD CLIP
2.0 K / BOX
J05Z
TO-5 OPTION STD
NO LEAD CLIP
1.5 K / BOX
CODE
TO-92 STANDARD
STRAIGHT
NO LEADCLIP
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267mm x 375mm
Intermediate Box
FSCINT
Label
Customized
Label
333mm x 231mm x 183mm
Intermediate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Style
Quantity
EOL code
Reel
A
2,000
D26Z
E
2,000
D27Z
Ammo
M
2,000
D74Z
P
2,000
D75Z
Unit weight = 0.22 gm
Reel weight with components = 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
F63TNR
Label
5Intermediate Box
Customized
Label
327mm x 158mm x 135mm
Immediate Box
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
D9842
SPEC REV:
B2
QA REV:
SPEC:
QTY:
10000
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Intermediate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1:
SPEC REN/F: F (F63TNR)3
SPEC:
QTY: 2000
QTY2:
F63TNR Label sample
FSCINT Label sample
C
Label
5 EO70 boxes per
intermediate Box
ustomized
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS8410A | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8410S | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8410 | Single N-Channel Enhancement Mode Field Effect Transistor（10A，30V，0.015Ω）(單N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流10A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）) |
| NDS8425 | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8426A | Single N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS7002A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS7002A_D87Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A_NB9GGTXA | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A_Q | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002AX | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 60V 0.28A SOT23 |
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