參數(shù)資料
型號: NDP508A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: 19 A, 80 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 6/6頁
文件大?。?/td> 73K
代理商: NDP508A
NDP508.SAM
0
4
8
12
16
20
0
3
6
9
12
15
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 10V
125°C
t
p
t
p
V = 10V
L
+
-
V
DD
V
DD
BV
DSS
I
L
t is adjusted to reach
the desired peak inductive
current, I .
p
Figure 13. Transconductance Variation
with Drain Current and Temperature
.
Figure 14. Unclamped Inductive Load
Circuit and Waveforms
.
Figure 15. Maximum Safe Operating Area
.
Figure 16. Transient Thermal Response Curve
.
Typical Electrical Characteristics
(continued)
0.01
0.1
1
10
100
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (m s)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R JC
R JC
T - T = P * R (t)
P(pk)
t
1
t
2
r
0.01
1
2
3
V , DRAIN-SOURCE VOLTAGE (V))
5
10
20
30
50
100
0.5
1
2
5
10
20
50
100
I
D
V = 20V
SINGLE PULSE
T = 25°C
RDS(ON) Limit
100μs
1ms
10ms
DC
10μs
相關(guān)PDF資料
PDF描述
NDP508AE N-Channel Enhancement Mode Field Effect Transistor
NDP508B N-Channel Enhancement Mode Field Effect Transistor
NDP508BE N-Channel Enhancement Mode Field Effect Transistor
NDB508AE N-Channel Enhancement Mode Field Effect Transistor(19A,80V,0.08Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流19A, 漏源電壓80V,導(dǎo)通電阻0.08Ω))
NDB508B N-Channel Enhancement Mode Field Effect Transistor(17A,80V,0.1Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流17A, 漏源電壓80V,導(dǎo)通電阻0.1Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP508AE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDP508B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDP508BE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDP510A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDP510AE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor