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參數(shù)資料
| 型號： | NDP410BE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 8 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 74K |
| 代理商： | NDP410BE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
t
r
t
D(OFF)
Turn - Off Delay Time
t
f
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
V
DD
= 50 V, I
D
= 9 A,
V
GS
= 10 V, R
GEN
= 24
ALL
ALL
7.5
29
20
50
nS
nS
Turn - On Rise Time
ALL
ALL
26
24
45
45
nS
nS
Turn - Off Fall Time
V
= 80 V,
I
D
= 9 A, V
GS
= 10V
ALL
ALL
ALL
11.6
2.3
5
17
nC
nC
nC
NDP410A
NDP410AE
NDB410A
NDB410AE
NDP410B
NDP410BE
NDB410B
NDB410BE
NDP410A
NDP410AE
NDB410A
NDB410AE
NDP410B
NDP410BE
NDB410B
NDB410BE
ALL
9
A
8
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
36
A
32
A
V
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 4.5 A
0.87
0.75
85
1.3
1.2
120
V
V
ns
T
J
= 125°C
t
rr
I
rr
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Reverse Recovery Time
V
GS
= 0 V, I
= 9 A,
dI
S
/dt = 100 A/μs
ALL
Reverse Recovery Current
ALL
6
9
A
R
θ
JC
R
θ
JA
Notes:
1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
ALL
3
°
C/W
Thermal Resistance, Junction-to-Ambient
ALL
62.5
°
C/W
NDP410.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDB410BE | N-Channel Enhancement Mode Field Effect Transistor（8A,100V，0.3Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流8A, 漏源電壓100V，導(dǎo)通電阻0.3Ω）) |
| NDB410A | N-Channel Enhancement Mode Field Effect Transistor（9A,100V，0.25Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流9A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| NDB410B | N-Channel Enhancement Mode Field Effect Transistor（8A,100V，0.3Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流8A, 漏源電壓100V，導(dǎo)通電阻0.3Ω）) |
| NDB5060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（26A,60V，0.05Ω）(N溝道邏輯電平增強(qiáng)型MOS場效應(yīng)管（漏電流26A, 漏源電壓60V，導(dǎo)通電阻0.05Ω）) |
| NDP5060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP5060 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP5060L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP508A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP508AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP508B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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