參數(shù)資料
型號： NDP408BE
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 11 A, 80 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 73K
代理商： NDP408BE
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 12 A
NDP408AE
NDP408BE
NDB408AE
NDB408BE
40
mJ
12
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 μA
ALL
80
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 80 V,
V
GS
= 0 V
ALL
250
μA
T
J
= 125°C
1
mA
nA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ALL
100
Gate - Body Leakage, Reverse
ALL
-100
nA
V
DS
= V
,
I
D
= 250 μA
ALL
2
2.9
4
V
T
J
= 125°C
1.4
2.3
0.11
3.6
0.16
V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 6 A
NDP408A
NDP408AE
NDB408A
NDB408AE
T
J
= 125°C
0.19
0.32
V
GS
= 10 V,
I
D
= 5.5 A
NDP408B
NDP408BE
NDB408B
NDB408BE
NDP408A
NDP408AE
NDB408A
NDB408AE
NDP408B
NDP408BE
NDB408B
NDB408BE
ALL
0.2
T
J
= 125°C
0.5
A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
11
10
A
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
V
DS
= 10 V, I
D
= 6 A
3
5.3
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
380
500
pF
ALL
115
125
pF
ALL
35
50
pF
NDP408.SAM
相關(guān)PDF資料
PDF描述
NDB408AE N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.16Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.16Ω）)
NDP408A N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.16Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.16Ω）)
NDB408B N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.9Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.9Ω）)
NDB408BE N-Channel Enhancement Mode Field Effect Transistor（12A,80V，0.9Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流12A, 漏源電壓80V，導(dǎo)通電阻0.9Ω）)
NDB410AE N-Channel Enhancement Mode Field Effect Transistor（9A,100V，0.25Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流9A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP410A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDP410AE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDP410AL 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP410B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDP410BE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*