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參數(shù)資料
| 型號(hào)： | NDL7103 |
| 廠商： | NEC Corp. |
| 英文描述： | InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION |
| 中文描述： | InGaAsP的應(yīng)變量子阱的DC -異質(zhì)結(jié)脈沖激光二極管模塊1310 OTDR的應(yīng)用 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | NDL7103 |
2
NDL7503P Series
ORDERING INFORMATION
Part Number
Available Connector
FIange Type
NDL7503P
Without Connector
no flange
NDL7503PC
With FC-PC Connector
NDL7503PD
With SC-PC Connector
NDL7503P1
Without Connector
flat mount flange
NDL7503P1C
With FC-PC Connector
NDL7503P1D
With SC-PC Connector
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
q
C)
Parameter
Symbol
Ratings
Unit
Pulsed Forward Current
*1
I
FP
1.2
A
Reverse Voltage
V
R
2.0
V
Operating Case Temperature
T
C
e
20 to +60
q
C
Storage Temperature
T
stg
e
40 to +85
q
C
Lead Soldering Temperature (10sec)
T
sld
260
q
C
*1
Pulse Condition: Pulse Width (PW) = 10
P
s, Duty = 1 %
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25
q
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Forward Voltage
V
FP
I
FP
= 1000 mA,
PW = 10
P
s, Duty = 1 %
2.5
4.0
V
Threshold Current
I
th
35
65
mA
Optical Output Power from Fiber
P
f
I
FP
= 1000 mA,
PW = 10
P
s, Duty = 1 %
110
180
mW
RMS Center Wavelength
O
C
I
FP
= 1000 mA,
PW = 10
P
s, Duty = 1 %
1290
1310
1330
nm
RMS Spectral Width
V
I
FP
= 1000 mA,
PW = 10
P
s, Duty = 1 %
4.5
10.0
nm
Rise Time
t
r
10 - 90 %
2.0
ns
Fall Time
t
f
90 - 10 %
2.0
ns
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 0 to +60
q
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Threshold Current
I
tr
80
mA
Optical Output Power from Fiber
P
f
I
FP
= 1000 mA,
PW = 10
P
s, Duty = 1 %
75
mW
RMS Center Wavelength
O
C
I
FP
= 1000 mA,
PW = 10
P
s, Duty = 1 %
1280
1342.5
nm
Temperature Dependency of
Center Wavelength
'O
/
'
T
0.35
nm/
q
C
RMS Spectral Width
V
I
FP
= 1000 mA,
PW = 10
P
s, Duty = 1 %
10
nm
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